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DTA123JE 参数 Datasheet PDF下载

DTA123JE图片预览
型号: DTA123JE
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管数字 [PNP Digital Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 342 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号DTA123JE的Datasheet PDF文件第2页  
FM120-M
DTA123JE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Features
board space.
optimize
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
Guardring for overvoltage protection.
Epoxy meets UL 94 V-0 flammability rating
Ultra high-speed switching.
Moisure Sensitivity Level 1
chip, metal silicon junction.
Silicon epitaxial planar
Built-in
Lead-free parts
enable the configuration of an inverter circuit
bias resistors
meet environmental standards of
without
MIL-STD-19500 /228
input resistors
connecting external
RoHS product
consist of thin-film resistors with complete
The bias resistors
for packing code suffix "G"
Halogen free product for packing code
input.
isolation to allow negative biasing of the
suffix "H"
They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
Only the on/off
UL94-V0 rated flame retardant
operation, making
Epoxy :
conditions need to be set for
device design
Molded plastic, SOD-123H
Case :
easy
Absolute maximum ratings @ 25
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
Pb-Free package is available
Low power loss, high efficiency.
RoHS
High current capability, low forward voltage drop.
product for packing code suffix ”G”
High surge capability.
Halogen free product for packing code suffix “H”
0.146(3.7)
0.130(3.3)
SOT-523
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.014(0.35)
Typ.
0.031(0.8)
.010(0.25)
.043(1.10)
.004(0.10)MIN.
 
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-1.1
14
-0.3
-3.6
20
-0.5
---
2.86
26
---
Unit
13
V
30
V
Symbol
Parameter
Min
Typ
Marking Code
---
V
I(off)
-0.5
Input voltage (V
CC
=-5V, I
O
=-100­A)
Maximum Recurrent Peak Reverse Voltage
V
RRM
---
V
I(on)
(V
O
=-0.3V, I
O
=-5mA)
---
V
O(on)
Output voltage (I
O
/I
---
RMS
---
Maximum RMS Voltage
=
I
-5mA/-0.25mA
V
I
I
=
I
-5V)
Input current (V
---
---
Maximum DC Blocking Voltage
V
DC
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum Average Forward
(V
O
=-5V, I
Current
G
I
DC current gain
Rectified
O
-10mA)
=
80
I
O
---
 
 
R
1
Input resistance
1.54
2.2
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
17
I
FSM
21
superimposed on rated
frequency
method)
Transition
load (JEDEC
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
80
.069(1.75)
.057(1.45)
Symbol
Parameter
Min
Typ
Max
Unit
Method 2026
.035(0.90)
V
CC
Supply voltage
---
-50
---
V
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
-12
V
V
IN
Input voltage
---
5
-100
I
O
Mounting Position : Any
Output current
---
---
mA
I
C(MAX)
-100
Weight
dissipation
P
d
Power
: Approximated 0.011 gram
---
150
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM
T
stg
Storage temperature
RATINGS AND ELECTRICAL CHARACTERISTICS
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
10
100
100
115
150
105
150
120
200
140
200
21
V
mA
30
­A
.008(0.20)
70
.004(0.10)
MHz
 
 
-55 to
.014(0.35)
+150
.004(0.10)MAX.
.035(0.90)
.028(0.70)
0.9
0.92
 
 
C
J
T
J
TSTG
 
-55 to +125
40
120
 
 
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
-
65
to +175
.006(0.15)
*Marking: E32
F
V
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.50
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.70
0.85
Dimensions in inches and (millimeters)
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR