FM120-M
DTA114TUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
Features
•
•
•
isolation to allow negative biasing of the input. They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects
•
Epoxy : UL94-V0 rated
to be set for operation, making
Only the on/off conditions need
flame retardant
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
.010(0.25)
0.024(0.6)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position
Absolute Maximum Ratings
: Any
•
Weight
Parameter
: Approximated 0.011 gram
Value
Symbol
Unit
Collector-Base Voltage
V
CBO
-50
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Collector-Emitter Voltage
V
CEO
-50
V
Ratings at
Emitter-Base voltage
25℃ ambient temperature unless otherwise specified.
V
EBO
-5
V
Collector Current-Continuous
wave, 60Hz, resistive of inductive load.
I
C
-100
mA
Single phase half
Collector Dissipation
For capacitive load, derate current
P
C
20%
by
200
mW
.056(1.40)
Junction Temperature Range
RATINGS
T
J
.047(1.20)
-55~150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
-55~150
V
RRM
Marking Code
Storage Temperature Range
T
STG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Electrical Characteristics
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
16
60
.054(1.35)
.045(1.15)
.087(2.20)
.070(1.80)
Dimensions in inches and (millimeters)
18
80
56
80
10
100
70
100
.096(2.45)
.078(2.00)
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
Pb-Free
•
package is available
•
High current capability, low forward voltage drop.
RoHS product
surge
packing code suffix ”G”
•
High
for
capability.
Guardring for
for packing code suffix “H”
Halogen
•
free product
overvoltage protection.
•
Ultra high-speed switching.
rating
Epoxy meets UL 94 V-0 flammability
•
Silicon epitaxial planar chip, metal silicon junction.
Moisure Sensitivity Level 1
•
Lead-free parts meet environmental standards of
Built-in bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
without connecting external input
code suffix "G"
equivalent circuit)
•
RoHS product for packing
resistors (see
The bias resistors
free product
thin-film resistors with complete
Halogen
consist of
for packing code suffix "H"
SOT-323
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
115
150
105
150
.043(1.10)
.032(0.80)
120
200
140
200
V
RMS
V
DC
I
O
Typ
I
FSM
42
.004(0.10)MAX.
50
60
1.0
30
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
Min
superimposed on rated load (JEDEC method)
Collector-Base Breakdown Voltage
Sym
V
(BR)CBO
Max
Unit
*Marking: 94
-50
---
---
V
(I
C
=-50uA, I =0)
40
Typical Thermal
E
Resistance (Note 2)
R
ΘJA
Collector-Emitter Breakdown Voltage
-50
---
---
V
V
(BR)CEO
Typical Junction Capacitance (Note 1)
120
C
J
Dimensions in inches and (millimeters)
(I
C
=-1mA, I
B
=0)
-55 to +125
-55 to +150
Operating Temperature Range
Voltage
T
J
Emitter-Base Breakdown
-5
---
---
V
V
(BR)EBO
(I
E
=-50uA, I
C
=0)
-
65
to +175
Storage Temperature Range
TSTG
Collector Cut-off Current
Suggested Solder
---
---
-0.5
uA
I
CBO
(V
CB
=-50V, I
E
=0)
FM180-MH FM1100-MH
FM1150-MH
FM1200-M
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
Pad Layout
Emitter Cut-off Current
---
---
-0.5
uA
I
EBO
(V
EB
=-4V, I
C
=0)
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
0.70
mm
DC Current Gain
0.5
100
250
600
---
h
FE
Maximum Average Reverse Current at @T A=25℃
I
R
(V
CE
=-5V, I
C
=-1mA)
0.90
10
@T
Rated DC Blocking Voltage
Collector-Emitter Saturation Voltage
A=125℃
---
---
-0.3
V
V
CE(sat)
(I
C
=-10mA, I
B
=-1mA)
13
K
7
10
1.90
R
1
NOTES:
Resistor
Input
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Transition Frequency
---
250
---
MHz
f
T
(V
CE
=-10V, I
C
=-5mA,
Junction to
2- Thermal Resistance From
f=100MHz)
Ambient
.016(0.40)
.008(0.20)
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
