FM120-M
THRU
DS751-40WB
WBFBP-02C
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE
SOD-123
•
Batch process design,
Schottky barrier Diode
leakage excellent power dissipation offers
better reverse
current and thermal resistance.
DESCRIPTION
profile surface mounted application in order to
•
Low
optimize board space.
Silicon epitaxial
power loss, high efficiency.
planar
•
Low
•
High current capability, low forward voltage drop.
•
High surge capability.
FEATURES
•
Guardring for overvoltage protection.
Small
•
Ultra high-speed switching.
surface mounting type
•
Silicon epitaxial planar chip, metal
voltage
Low reverse current and low forward
silicon junction.
•
Lead-free parts meet environmental standards of
High reliability
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
WBFBP-02C
0.146(3.7)
(1.0×0.6×0.5)
0.130(3.3)
unit: mm
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
Weight : Approximated 0.011 gram
MARKING:
5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
RATINGS
Marking Code
im
12
20
14
13
30
21
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
14
15
Limits
40
50
28
40
16
60
42
60
1.0
30
40
120
18
80
56
80
10
Unit
100
70
100
115
150
105
150
120
200
140
200
V
RMS
V
DC
20
Pb-Free package
Method 2026
is available
•
Polarity : Indicated by
code
band
RoHS product for packing
cathode
suffix ”G”
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
Pr
el
V
RM
V
R
I
O
Parameter
Maximum Recurrent Peak Reverse Voltage
Peak reverse voltage
Symbol
V
RRM
Maximum RMS Voltage
ry
40
30
30
35
50
APPLICATION
Mechanical data
High speed
Epoxy : UL94-V0
detection
retardant
switching
for
rated flame
•
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
•
Case : Molded plastic, SOD-123H
DVD-ROM,
Terminals :Plated terminals, solderable per MIL-STD-750 ,
•
Note book PC, etc.)
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum DC Blocking Voltage
V
V
DC
Maximum Average Forward Rectified Current
reverse voltage
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
Mean rectifying current
I
O
I
FSM
mA
Peak forward surge current
Power dissipation
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
I
FSM
P
D
R
ΘJA
C
J
T
J
-55 to +125
150
100
1000
mA
mW
-
65
to +175
-55 to +150
Thermal Resistance from
TSTG
CHARACTERISTICS
Junction to Ambient
Maximum Forward Voltage at 1.0A DC
R
θJA
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
℃/W
℃
℃
Junction temperature
Maximum Average Reverse Current at @T A=25℃
T
j
V
F
I
R
0.50
1
5
-55~+150
0.70
0.5
10
0.85
0.9
0.92
Rated
temperature
Storage
DC Blocking Voltage
NOTES:
@T A=125℃
T
stg
Electrical Ratings
and applied reverse voltage of 4.0 VDC.
@Ta=25℃
1- Measured at 1 MHZ
2- Thermal Resistance From Junction to Ambient
Parameter
Symbol
V
F
I
R
C
T
Min
Typ
Max
0.37
0.5
Unit
V
μA
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V,f=1MHZ
Forward voltage
Reverse current
Capacitance between terminals
2
2012-06
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
