WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
•
Batch process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Small surface mounting type
optimize board space.
•
Low power loss, high efficiency.
Two diode elements are connected in series
•
High current capability, low forward voltage drop.
Pb-Free
surge capability.
•
High
package is available
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
•
Ultra
free product for packing code suffix “H”
Halogen
high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Moisture Sensitivity Level 1
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
DAN217U
FM1200-M
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
MARKING:A7
Mechanical data
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method
Electrical Characteristics, Single Diode @Ta=25
℃
Maximum Ratings and
2026
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Parameter
Symbol
Limit
Unit
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
80
Peak reverse voltage
V
RM
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
80
DC reverse voltage
V
R
Ratings at 25℃ ambient temperature unless otherwise specified.
Maximum (peak) forward current
of inductive load.
I
FM
Single phase half wave, 60Hz, resistive
For capacitive load, derate current by 20%
V
mA
mA
300
100
15
400
50
Average forward current
RATINGS
O
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
I
Marking Code
Surge current (1μs)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
(10ms)
I
RRM
V
FSM
V
RMS
12
20
14
20
13
30
21
30
14
40
28
40
1000
35
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
mA
150
105
120
200
140
200
Volt
Volt
Power
DC Blocking
Maximum
dissipation
Voltage
Maximum Average Forward Rectified Current
P
D
V
DC
T
j
I
FSM
I
O
200
50
150
-55~+150
-40~+100
mW
150
℃
Volt
Am
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage temperature
T
stg
R
ΘJA
Typical Thermal Resistance (Note 2)
℃
℃
Am
Operating temperature range
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
T
opr
C
J
T
J
TSTG
-55 to +125
-55 to +150
℃/W
PF
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
Maximum Forward
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
ELECTRICAL
Voltage at 1.0A DC
V
F
0.50
0.70
Rated DC Blocking Voltage
Parameter
NOTES:
0.85
0.5
10
Min
0.9
0.92
Volt
@T A=125℃
I
R
mAm
Symbol
V
(BR)
I
R
V
F
Test
conditions
I
R
= 100μA
V
R
=70V
I
F
=100mA
Max
Unit
V
Reverse
1 MHZ and applied reverse
1- Measured at
breakdown voltage
voltage of 4.0 VDC.
80
0.2
1200
2- Thermal Resistance From Junction to Ambient
Reverse voltage leakage current
Forward voltage
μA
mV
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
