SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
TRANSISTOR (NPN)
•
Low power loss, high efficiency.
FEATURES
High current capability, low forward voltage drop.
•
Power
•
High surge capability.
dissipation
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
•
Silicon
packing code suffix ”G”
RoHS product for
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
D882
THRU
PACKAGE
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0
MAXIMUM RATINGS (T
rated flame retardant
a
=25℃ unless otherwise noted)
•
Case : Molded plastic, SOD-123H
,
Symbol
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Method 2026
Collector-Base Voltage
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
40
30
6
3
V
V
V
A
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Collector-Emitter Voltage
•
Mounting Position : Any
Emitter-Base Voltage
•
Weight : Approximated 0.011 gram
Collector Current -Continuous
MAXIMUM RATINGS
CHARACTERISTICS
Collector Power Dissipation
AND ELECTRICAL
W
0.5
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
150
℃
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
-55~150
℃
T
stg
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELECTRICAL CHARACTERISTICS(T
a
= 25℃ unless otherwise specified)
Maximum RMS Voltage
V
RRM
V
RMS
I
O
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
10
100
70
115
150
105
120
200
140
200
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Collector cut-off current
Maximum Average Forward Rectified Current
Parameter
V
Symbol
DC
Test conditions
I
C
= 100μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 30V, I
B
=0
V
EB
= 6V, I
C
=0
0.50
-55 to +125
20
30
Min
40
30
6
Typ
80
Max
100
Unit
V
V
150
Collector-emitter breakdown voltage
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
V
(BR)CBO
I
FSM
V
(BR)CEO
V
(BR)EBO
R
ΘJA
I
CBO
C
J
I
CEO
T
J
I
EBO
TSTG
Typical
cut-off current
Collector
Junction Capacitance (Note 1)
Storage Temperature Range
40
120
V
µA
µA
µA
0.9
0.92
1
-
65
to +175
-55 to +150
10
1
Emitter cut-off current
DC
Maximum Forward Voltage at 1.0A DC
current gain
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
h
FE(1)
V
CE
=2V, I
C
= 1A
60
400
V
Collector-emitter saturation voltage
A=125℃
CE(sat)
@T
Rated DC Blocking Voltage
Base-emitter saturation voltage
Maximum Average Reverse Current at @T A=25℃
h
FE(2)
V
F
I
R
V
CE
=2V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V , Ic=0.1A
f =10MHz
32
0.70
0.85
0.5
10
0.5
1.5
V
V
MHz
NOTES:
V
BE(sat)
f
T
Transition frequency
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
CLASSIFICATION OF h
FE(1)
Rank
Range
2012-06
R
60-120
O
100-200
Y
160-320
GR
200-400
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
