SOT-23 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Static Characteristic
12
•
Guardring for overvoltage protection.
COMMON
•
Ultra high-speed switching.
30uA
EMITTER
10
•
Silicon epitaxial planar chip, metal silicon
=25
℃
T
a
junction.
27uA
•
Lead-free parts meet environmental standards of
24uA
MIL-STD-19500 /228
8
21uA
•
RoHS product for packing code suffix "G"
Halogen free product for
18uA
packing code suffix "H"
6
WILLAS
C945
THRU
FM1200-M
FM120-M
PACKAGE
Pb Free Produ
Features
Package outline
Typical Characteristics
1000
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
h
FE
——
I
C
T
a
=100
℃
0.071(1.8)
0.056(1.4)
(mA)
h
FE
300
COLLECTOR CURRENT
Mechanical data
DC CURRENT GAIN
T
a
=25
℃
I
C
15uA
100
0.040(1.0)
0.024(0.6)
12uA
•
Epoxy : UL94-V0 rated flame retardant
4
•
Case : Molded plastic, SOD-123H
9uA
,
6uA
2
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
30
Method 2026
0
•
Polarity : Indicated by cathode band
0
2
4
6
8
Position : Any
•
Mounting
COLLECTOR-EMITTER VOLTAGE V
•
Weight : Approximated 0.011 gram
V
CEsat
——
I
C
I
B
=3uA
10
CE
12
10
0.7
Dimensions in inches and (millimeters)
1
3
10
30
V
CE
=6V
100
150
(V)
COLLECTOR CURRENT
I
C
(mA)
300
1000
V
BEsat
——
I
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
100
RATINGS
℃
T =100
a
T
a
=25
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
T
a
=25
℃
Marking Code
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
β=10
I
FSM
100 150
R
ΘJA
C
J
T
J
f=1MHz
I
E
=0 /I
TSTG
C
=0
T
a
=25
℃
12
20
14
20
13
600
30
21
30
400
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
3
40
120
——
18
10
80
T
a
=100
℃
100
56
80
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
10
superimposed on rated load (JEDEC method)
1
3
10
30
β=10
10
30
100 150
200
0.1
0.3
1
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
(pF)
15
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
Typical Junction Capacitance
/
(Note 1)
C
ob
C
ib
——
V
CB
/
V
EB
-55 to +125
0.25
P
C
T
a
-55 to +150
COLLECTOR POWER DISSIPATION
P
C
(W)
-
65
to +175
0.20
CHARACTERISTICS
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
C
ib
Maximum Forward Voltage at 1.0A DC
C
CAPACITANCE
V
F
I
R
0.50
0.15
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
5
C
ob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.10
2- Thermal Resistance From Junction to Ambient
0.05
0
0.1
0.00
0.3
1
3
10
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
