SOT-23 Plastic-Encap sulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
1 15
THRU
FM1200-
FM120-M
Pb Free Prod
Package outline
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
•
Batch process design, excellent power dissipation offers
TRANSISTOR (NPN)
surface mounted application in order to
•
Low profile
FEATURES
optimize board space.
•
Low power loss, high efficiency.
Power dissipation
capability, low forward voltage drop.
•
High current
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product for packing
switching.
code suffix ”G”
•
Ultra high-speed
•
product for
planar chip, metal silicon
“H”
Halogen free
Silicon epitaxial
packing code suffix
junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MARKING : HF
•
RoHS product for packing code suffix "G"
MAXIMUM RATINGS (T
a
=25℃
for packing
otherwise noted)
Halogen free product
unless
code suffix "H"
Symbol
•
Epoxy : UL94-V0 rated flame retardant
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
better reverse leakage current and thermal resistance.
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
Mechanical data
Value
0.031(0.8) Typ.
0.040(1.0)
Unit
0.024(0.6)
Collector-Base
SOD-123H
•
Case : Molded plastic,
Voltage
,
Collector-Emitter Voltage
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
Collector Current -Continuous
•
Mounting Position : Any
Collector Power Dissipation
•
Weight : Approximated 0.011 gram
Junction Temperature
Storage Temperature
Method 2026
Emitter-Base Voltage
60
50
5
150
200
150
V
V
V
mA
℃
℃
mW
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
ELECTRICAL
phase half wave, 60Hz, resistive
a
=25℃ unless otherwise
CHARACTERISTICS (T
of inductive load.
For capacitive load, derate current by 20%
Marking Code
-55-150
specified)
14
40
28
40
15
60
50
35
50
16
60
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
Parameter
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base
Recurrent Peak
voltage
Voltage
Maximum
breakdown
Reverse
Collector-emitter breakdown voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
V
(BR)CBO
V
RRM
V
(BR)CEO
V
RMS
V
DC
12
13
I
C
== 0
100uA, I
30
20
E
V
V
uA
uA
uA
120
200
I= 0
C
= 0.1mA, I
B
20
30
14
21
50
42
140
200
Collector cut-off current
Maximum Average Forward Rectified Current
V
CB
=60V, I
E
I
CBO
I
= 0
O
0.1
0.1
0.1
400
Peak Forward Surge Current 8.3 ms single half sine-wave
=
I
CEO
I
FSM
V
CE
=50V, I
B
0
Collector cut-off current
Emitter cut-off current
Typical Thermal Resistance (Note 2)
DC current gain
Operating Temperature Range
superimposed on rated load (JEDEC method)
=
I
EBO
R
ΘJA
V
EB
= 5V, I
C
0
h
FE
C
J
T
J
Typical Junction Capacitance (Note 1)
V
CE
= 6V, I
C
= 2mA
-55 to +125
130
-
65
to +175
-55 to +150
Storage Temperature Range
Collector-emitter saturation voltage
Base-emitter saturation voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
I
C
=100mA, I
B
= 10mA
V
CE(sat)
0.25
0.85
V
0.9
V
BE(sat)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
1
FM1100-MH
V
FM1150-MH
FM1200
SYMBOL
I
C
=100mA, I
B
= 10mA
V
F
Maximum Average
Transition frequency
Reverse Current at @T A=25℃
f
T
Rated DC Blocking Voltage
V
CE
=10V, I
C
= 1mA,
f=30MHz
0.50
0.70
0.9
@T A=125℃
I
R
80
0.5
10
MHz
CLASSIFICATION OF h
FE
reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and applied
Rank
NOTES:
Range
2- Thermal Resistance From Junction to Ambient
L
H
200-400
130-200
2012-06
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
