WILLAS
Power MOSFET
130
BARRIER RECTIFIERS
Volts
1.0A SURFACE MOUNT SCHOTTKY
mAmps, 50
-20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
.087(2.20)
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
.070(1.80)
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
BSS84WT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
SOT−323
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.054(1.35)
.045(1.15)
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.096(2.45)
.078(2.00)
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
.047(1.20)
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
.056(1.40)
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
V
DC
I
O
.043(1.10)
.032(0.80)
.016(0.40)
14
.008(0.20)
20
12
20
13
30
21
30
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Dimensions
I
FSM
R
ΘJA
C
J
in inches and (millimeters)
Amps
Typical Thermal Resistance (Note 2)
Operating Temperature Range
-55 to +150
Typical Junction Capacitance (Note 1)
SOLDERING FOOTPRINT*
-55 to +125
0.65
Storage Temperature Range
0.025
0.65
T
J
0.025
TSTG
GENERIC
MARKING DIAGRAM
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
XX
M
V
F
@T A=125℃
0.50
0.70
1.9
I
R
0.075
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.035
0.5
XX
10
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
1
0.85
0.9
0.92
Volts
mAmps
2- Thermal Resistance From
0.7
Junction to Ambient
0.028
SCALE 10:1
mm
inches
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
