SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
FM120-M
BCX55
THRU
BCX56
FM1200-M
Pb Free Produc
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Symbol
High current
•
Parameter
capability, low forward voltage drop.
T est conditions
•
High surge capability.
BCX55
•
Guardring for overvoltage protection.
I
C
=100µA,I
E
=0
V
(BR)CBO
Collector-base breakdown
switching.
•
Ultra high-speed
voltage
BCX56
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
BCX55
"G"
•
RoHS product for packing code suffix
V
(BR)CEO*
I
C
=10mA,I
B
=0
Collector-emitter breakdown voltage
Halogen free product for packing code suffix "H"
BCX56
Min
60
100
60
Typ
0.146(3.7)
0.130(3.3)
Max
0.012(0.3) Typ.
Unit
V
0.071(1.8)
0.056(1.4)
V
80
5
0.1
0.040(1.0)
0.024(0.6)
Emitter-base breakdown voltage
Mechanical data
V
µA
0.031(0.8) Typ.
0.031(0.8) Typ.
I
E
=100µA,I
C
=0
V
(BR)EBO
•
Epoxy : UL94-V0 rated flame retardant
V
CB
=30V,I
E
=0
Collector
•
Case :
current
plastic, SOD-123H
I
CBO
cut-off
Molded
V
EB
=5V,I
C
,
I
EBO
Emitter cut-off current
•
Terminals :Plated terminals, solderable per MIL-STD-750
=0
Method 2026
0.1
40
µA
h
FE(1)*
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=0.5A
I
C
=0.5A,I
B
=50mA
•
Polarity
DC current gain
: Indicated by cathode band
h
FE(2)*
•
Mounting Position : Any
h
FE(3)*
•
Weight : Approximated 0.011 gram
V
Collector-emitter saturation voltage
CE(sat)*
Dimensions in inches and
250
(millimeters)
63
25
0.5
1
130
V
V
MHz
V
CE
=2V, I
C
=0.5A
V
BE*
Base -emitter voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
f
T
V
CE
=5V,I
C
=10mA, f=100MHz
Transition
at 25℃ ambient temperature unless otherwise specified.
Ratings
frequency
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
12
20
14
20
13
14
BCX55-10
30
40
21
28
BCX56-10
30
40
15
50
35
50
16
18
60
BCX55-16
80
42
BCX56-16
56
60
80
1.0
100–250
30
40
120
CLASSIFICATION OF
h
FE(2)
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
BCX55
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
RANK
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
10
100
70
100
115
150
105
150
120
200
140
200
BCX56
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
63–250
RANGE
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
63–160
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
