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BCW68GLT1 参数 Datasheet PDF下载

BCW68GLT1图片预览
型号: BCW68GLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 297 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BCW68GLT1的Datasheet PDF文件第1页浏览型号BCW68GLT1的Datasheet PDF文件第3页  
FM120-M
BCW68GLT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
optimize board space.
Characteristic
Symbol
Min
Low power loss, high efficiency.
ON CHARACTERISTICS
low forward voltage drop.
High current capability,
DC
surge
Gain
h
FE
High
Current
capability.
for overvoltage protection.
Guardring
mAdc, V
CE
= –1.0 Vdc )
( I
C
= –10
120
switching.
Ultra high-speed
V
CE
= –1.0 Vdc )
( I
C
= –100 mAdc,
160
chip, metal
Silicon epitaxial planar
–1.0 Vdc )
silicon junction.
( I
C
= –300 mAdc, V
CE
=
60
Lead-free parts meet environmental standards of
Collector–Emitter Saturation Voltage
V
CE(sat)
MIL-STD-19500 /228
( I
C
= – 300 mAdc, I
B
= –30 mAdc )
RoHS product for packing code suffix "G"
Base–Emitter Saturation Voltage
Halogen free product for packing code suffix "H"
V
BE(sat)
( I
C
= – 500 mAdc, I
B
= –50
Mechanical data
mAdc )
T
Case : Molded plastic, SOD-123H
(I
C
= –20mAdc, V
CE
= –10 Vdc, f = 100 MHz)
,
Terminals :Plated terminals, solderable per MIL-STD-750
Output Capacitance
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Typ
0.146(3.7)
0.130(3.3)
Max
Unit
0.012(0.3) Typ.
400
– 1.5
– 2.0
0.071(1.8)
0.056(1.4)
Vdc
Vdc
0.040(1.0)
0.024(0.6)
SM
SMALL–SIGNAL CHARACTERISTICS
Epoxy : UL94-V0 rated flame retardant
Current–Gain — Bandwidth Product
f
100
0.031(0.8) Typ.
MHz
0.031(0.8) Typ.
Vdc, I = 0,
(V
CB
= – 10
Method
E
2026
f = 1.0 MHz)
Polarity : Indicated by cathode band
Input Capacitance
(V
EB
= –0.5 Vdc, I
Any
Mounting Position
C
:
= 0, f = 1.0 MHz)
Noise
: Approximated 0.011 gram
Weight
Figure
C
obo
C
ibo
18
105
10
pF
pF
dB
Dimensions in inches and (millimeters)
NF
(V
CE
= – 5.0 Vdc, I
C
= – 0.2 mAdc, R
S
= 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
 
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR