WILLAS
SOT-323 Plastic-Encapsulate Diodes
Features
SWITCHING DIODE
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
BAV99W
THRU
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
•
Batch process design, excellent power dissipation offers
FEATURES
reverse leakage current and thermal resistance.
better
•
Low profile surface mounted application in order to
For high-speed switching applications
optimize board space.
Connected in series
efficiency.
•
Low power loss, high
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for packing
protection.
”G”
•
Guardring for overvoltage
code suffix
Halogen
high-speed switching.
•
Ultra
free product for packing code suffix “H”
•
Silicon epitaxial planar chip,
Moisture Sensitivity Level 1
metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
3
2
0.071(1.8)
0.056(1.4)
Mechanical data
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Parameter
Symbol
Limit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Reverse voltage
V
R
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Forward current
I
O
Marking Code
ina
75
150
15
50
150
35
12
20
14
13
30
21
30
14
40
28
40
MARKING: KJG
or A7
by cathode band
•
Polarity : Indicated
•
Mounting Position : Any
Maximum Ratings @Ta=25℃
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Unit
V
mA
Pr
el
Forward power dissipation
RATINGS
im
P
D
V
RRM
T
j
V
RMS
V
DC
I
O
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
200
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
Junction temperature
16
60
42
1.0
30
40
Min
120
18
80
56
80
10
100
70
100
mW
115
150
℃
120
200
140
200
Volts
Storage temperature
Maximum DC Blocking Voltage
T
stg
20
-55~+150
60
50
℃
150
105
Volts
Volts
Maximum Average Forward Rectified Current
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
ELECTRICAL CHARACTERISTICS
I
FSM
(Ta=25℃
R
ΘJA
T
J
unless otherwise specified)
Test
I
R
= 100µA
V
R
=75V
Amp
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Parameter
Typical Junction Capacitance (Note 1)
Reverse breakdown
Storage Temperature Range
voltage
Symbol
C
J
conditions
Max
-55 to +150
Unit
V
℃/W
PF
℃
℃
-55 to +125
75
-
65
to +175
V
TSTG
(BR)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
Reverse voltage leakage current
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
I
R
2.5
µA
V
F
I
R
V
R
=20V
0.50
0.70
25
0.85
nA
0.9
0.92
Volts
Maximum Average Reverse Current at @T A=25℃
Forward voltage
@T A=125℃
V
F
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V
f=1MHz
0.5
10
715
855
1000
1250
2
mAmp
mV
Diode capacitance
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
C
D
pF
I
F
=I
R
=10mA
t
rr
I
rr
=0.1×I
R
R
L
=100Ω
4
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
