SOD-323 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
Forward Characteristics
•
Silicon epitaxial planar chip, metal silicon junction.
400
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
100
Halogen free product for packing code suffix "H"
WILLAS
BAV19WS
FM120-M
BAV20WS
THRU
BAV21WS
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Typical Characteristics BAV19WS
1000
Reverse
Characteristics
0.071(1.8)
0.056(1.4)
300
100
Ta=100
℃
(mA)
(nA)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
30
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Ta
=1
00
℃
Ta
=2
5
℃
10
REVERSE CURRENT I
R
FORWARD CURRENT
30
0.040(1.0)
0.024(0.6)
I
F
Ta=25
℃
10
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
3
•
Polarity : Indicated by cathode band
•
3
Mounting Position : Any
•
Weight : Approximated 0.011 gram
1
0.2
1
Dimensions in inches and (millimeters)
0.3
0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
120
Ratings at 25℃ ambient
FORWARD VOLTAGE V
otherwise specified.
temperature unless
F
(V)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
REVERSE VOLTAGE
V
R
(V)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Capacitance Characteristics
Maximum Recurrent Peak Reverse Voltage
V
RRM
1.4
Maximum RMS Voltage
Maximum DC Blocking Voltage
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
f=1MHz
V
DC
12
20
20
13
30
21
30
(mW)
300
14
40
28
40
15
50
35
50
16
18
10
Power Derating Curve
60
80
100
42
60
1.0
30
40
120
56
80
70
100
115
150
105
150
120
200
140
200
Vo
Ta=25
℃
14
V
RMS
Vo
Maximum Average Forward Rectified Current
1.2
250
Vo
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
Am
POWER DISSIPATION
1.0
superimposed on rated load (JEDEC method)
P
D
Peak Forward Surge Current 8.3 ms single half sine-wave
200
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.8
150
-55 to +150
℃
P
-55 to +125
100
-
65
to +175
℃
℃
0.6
CHARACTERISTICS
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
FM120-MH
FM130-MH
50
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
0.4
Rated DC Blocking Voltage
0
5
10
V
F
@T A=125℃
V
R
15
0.50
20
0
0
25
0.70
0.5
50
0.85
10
75
100
125
0.9
150
0.92
Vo
I
R
mA
REVERSE VOLTAGE
(V)
AMBIENT TEMPERATURE
Ta
(
℃
)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
