SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
WILLAS
FM120-M
THRU
BAS21x
FM1200-M
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-23
SOD-123H
•
Batch process design, excellent power dissipation offers
FEATURES
reverse leakage current and thermal resistance.
better
Low profile surface
Fast
•
Switching Speed
mounted application in order to
optimize board space.
Surface Mount Package Ideally Suited for Automatic Insertion
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
For General Purpose Switching Applications
•
High surge capability.
High Conductance
overvoltage protection.
•
Guardring for
Pb-Free package is available
•
Ultra high-speed switching.
•
product for packing code suffix ”G”
RoHS
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts
for packing code suffix “H”
Halogen free product
meet environmental standards of
MIL-STD-19500 /228
Moisture Sensitivity
packing
1
•
RoHS product for
Level
code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
BAS21
BAS21A
•
Mounting
Marking: JS
Position : Any
Marking:JS2
BAS21C
Marking:JS3
Dimensions in inches and (millimeters)
BAS21S
Marking: JS4
•
Weight : Approximated 0.011 gram
Maximum Ratings @Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate
voltage
Repetitive peak reverse
current by 20%
Marking Code
RATINGS
Working
peak
reverse voltage
Symbol
V
RRM
13
30
21
30
RWM
Limit
Unit
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
SYMBOL
FM120-M
H FM130-MH
V
V
250
Forward
continuous
Maximum RMS Voltage
current
Maximum Recurrent Peak Reverse Voltage
DC
blocking voltage
V
RRM
V
RMS
V
DC
12
20
14
V
R
I
FM
28
40
I
O
14
40
15
50
35
50
16
60
42
400
1.0
2.5
0.5
30
18
80
56
10
100
70
115
150
120
200
140
Vol
mA
105
150
mA
Vol
Maximum DC Blocking
output current
Average
rectified
Voltage
20
60
200
80
100
200
Vol
Maximum Average
peak forward surge current
Non-repetitive
Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Repetitive
peak forward surge current
Power
dissipation
@ t = 1.0s
I
FSM
R
ΘJA
C
J
T
J
TSTG
I
O
t = 1.0µs
@
I
FSM
Am
A
Am
I
FRM
P
D
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Thermal
resistance junction
to
ambient
Storage Temperature Range
-55 to +125
θJA
R
40
225
120
625
55
mA
mW
℃
℃/W
PF
Junction temperature
T
J
0.50
0.70
-
65
to +175
-55 to +150
℃/W
℃
150
℃
Storage temperature range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
T
STG
-55~+150
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
0.85
0.5
10
0.9
0.92
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Maximum Average Reverse Current at @T A=25℃
Vol
NOTES:
Parameter
@T A=125℃
mAm
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 100µA
V
R
=200V
I
F
=100mA
I
F
=200mA
conditions
Min
250
Max
0.1
1000
1250
5
50
Unit
V
µA
mV
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse breakdown voltage
2- Thermal Resistance From Junction to Ambient
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
V
R
=0V, f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1×I
R,
R
L
=100Ω
pF
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
