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BAS21C-TG-WS 参数 Datasheet PDF下载

BAS21C-TG-WS图片预览
型号: BAS21C-TG-WS
PDF下载: 下载PDF文件 查看货源
内容描述: [Rectifier Diode, 2 Element, 0.2A, 250V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3]
分类和应用: 二极管开关
文件页数/大小: 3 页 / 315 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BAS21C-TG-WS的Datasheet PDF文件第1页浏览型号BAS21C-TG-WS的Datasheet PDF文件第2页  
200mA
Surface Mount
Switching Diode-250V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Package
SOD-323
RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
FM120-M
THRU
BAS21H
FM1200-M
Pb Free Produc
Batch process design, excellent power dissipation offers
Features
Package outline
Outline Drawing
Low profile surface mounted application in order to
optimize board space.
better reverse leakage current and thermal resistance.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
.106(2.70)
SOD-323
0.146(3.7)
0.130(3.3)
SOD-123H
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.057(1.45)
.016(0.40)
.010(0.25)
Mechanical data
.091(2.30)
.045(1.15)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
rated flame retardant
Epoxy : UL94-V0
.075(1.90)
Case : Molded plastic, SOD-123H
,
.059(1.50)
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.043(1.10)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.031(0.80)
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.004(0.10)MAX.
18
80
56
80
1.0
 
30
40
120
10
100
70
100
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.008(0.20)
 
.004(0.10)
 
-55 to +125
 
 
 
-55 to +150
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
I
R
.016(0.40)
0.50
.010(0.25)
0.70
0.5
10
0.85
0.9
0.92
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.010(0.25)MIN.
 
 
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP
Rev.C
2012-1
WILLAS ELECTRONIC CORP.