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BAS19 参数 Datasheet PDF下载

BAS19图片预览
型号: BAS19
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 23塑封装二极管 [SOT-23 Plastic-Encapsulate Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 337 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BAS19的Datasheet PDF文件第1页  
WILLAS
SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
Batch process design, excellent power dissipation offers
FM120-M
BAS19
THRU
BAS20
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Mechanical data
.063(1.60)
.047(1.20)
.122(3.10)
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Method 2026
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
na
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
20
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
im
i
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
.080(2.04)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
 
Pr
el
16
60
42
60
1.0
 
30
18
80
.008(0.20)
115
10
100
150
105
150
100
.083(2.10)
.110(2.80)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
ry
 
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.003(0.08)
56
70
80
120
200
140
200
Vo
Vo
Vo
Maximum Average Forward Rectified Current
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
-55 to +125
40
120
 
-55 to +150
P
 
-
65
to +175
 
.004(0.10)MAX.
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
V
F
@T A=125℃
0.50
0.70
0.85
0.5
10
0.9
0.92
 
Vo
I
R
.055(1.40)
.035(0.89)
mA
 
 
.020(0.50)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.012(0.30)
NOTES:
Dimensions in inches and (millimeters)
2012-06
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
2012-1