WILLAS
SOT-563 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
BAS16V
FM1200-M
Pb Free Product
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
SWITCHING DIODE
optimize board space.
FEATURES
power loss, high efficiency.
•
Low
•
High current capability,
Fast Switching Speed
low forward voltage drop.
•
High surge capability.
For General Purpose Switching Applications
•
Guardring for overvoltage protection.
High Conductance
•
Ultra high-speed switching.
•
Silicon
package is available
Pb-Free
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
SOT-563
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
6
5
1
4
Moisture Sensitivity Level 1
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
Marking: KAM
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
1
0.031(0.8) Typ.
2
3
0.031(0.8) Typ.
Maximum Ratings @Ta=25℃
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Parameter
•
Weight : Approximated 0.011 gram
Non-Repetitive Peak
Reverse Voltage
Method 2026
Dimensions in inches and (millimeters)
Symbol
V
RM
Limit
100
Unit
V
V
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
RRM
Peak Repetitive Peak
Reverse Voltage
Ratings at 25℃
Reverse Voltage
75
Working Peak
ambient temperature unless otherwise specified.
V
RWM
Single phase half wave,
DC Blocking Voltage
60Hz, resistive of inductive load.
V
R
RMS Reverse Voltage
Marking Code
For capacitive load, derate current by 20%
RATINGS
Forward Continuous Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
R(RMS)
I
FM
53
Average Rectified Output Current
Maximum Recurrent Peak Reverse Voltage
Peak
Forward Surge Current
@t=1.0μs
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
I
O
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
200
40
28
2.0
40
1.0
300
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
mA
10
70
mA
100
100
115
150
105
150
120
200
140
200
Vol
@t =1.0s
I
FSM
A
Volt
Volt
Maximum Average Forward Rectified Current
Power Dissipation
Peak Forward Surge Current
Junction to Ambient
Thermal Resistance
8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
R
I
FSM
θJA
R
ΘJA
C
J
T
J
TSTG
I
O
P
D
150
833
mW
K/W
℃
℃
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Junction
Temperature
Storage
Temperature
T
j
T
STG
150
-55~+150
-55 to +125
℃/W
PF
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
-
65
to +175
-55 to +150
℃
℃
Parameter
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Symbol
Test conditions
Min
Max
Unit
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
0.50
0.70
0.85
0.9
0.92
Vol
Reverse breakdown
Current at
Maximum Average Reverse
voltage
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
R
V
(BR)
I
R
I
R
= 100µA
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
75
0.5
10
V
1
25
0.715
0.855
1
1.25
2
4
µA
nA
mAm
Reverse voltage leakage current
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Forward voltage
V
F
V
Diode capacitance
Reveres recovery time
C
D
t
rr
pF
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
