SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
•
Pb-Free package is available
WILLAS
FM120-M
BAS16LT1
THRU
FM1200-M
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
•
Low power loss, high efficiency.
High current
product for packing
voltage drop.
•
Halogen free
capability, low forward
code suffix “H”
High surge capability.
•
Moisture Sensitivity Level 1
•
Guardring for overvoltage protection.
DEVICE MARKING AND ORDERING INFORMATION
•
Ultra high-speed switching.
Device
Marking
Package
Shipping
•
Silicon epitaxial planar chip, metal silicon junction.
SOT-23
3000/Tape&Reel
Lead-free
environmental standards of
•
BAS16LT1
parts meet
A6
MAXIMUM RATINGS
•
RoHS product for packing code suffix "G"
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
optimize board space.
0.146(3.7)
0.130(3.3)
3
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
SOT–23
Mechanical data
Continuous Reverse Voltage
Halogen free product for packing code suffix "H"
Rating
Symbol
V
R
Value
75
Unit
Vdc
mAdc
mAdc
3
CATHODE
0.031(0.8) Typ.
THERMAL CHARACTERISTICS
Method 2026
•
Epoxy : UL94-V0 rated flame retardant
Peak Forward Current
I
F
200
•
Case : Molded plastic, SOD-123H
Peak Forward Surge Current
I
FM(surge)
500
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity :
Characteristic
cathode band
Indicated by
Mounting
Dissipation FR–
•
Total Device
Position : Any
5 Board, (1)
A
= 25°C
•
T
Weight : Approximated 0.011 gram
Symbol
P
D
1
ANODE
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Max
225
Unit
Dimensions in inches and (millimeters)
mW
Alumina Substrate, (2)
resistive
Single phase half wave, 60Hz,
T
A
= 25°C
of inductive load.
Derate above 25°C
2.4
mW/°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Junction and Storage Temperature
T
J
, T
stg
–55 to +150
°C
Marking Code
12
13
14
15
16
18
10
115
120
20
30
noted)
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise
Maximum RMS Voltage
Characteristic
Maximum DC Blocking Voltage
OFF CHARACTERISTICS
Derate above 25°C
Thermal
MAXIMUM RATINGS AND ELECTRICAL
Resistance, Junction to Ambient
R
θJA
P
D
Ratings
Total Device Dissipation
at 25℃ ambient temperature unless otherwise specified.
1.8
mW/°C
556
°C/W
CHARACTERISTICS
300
mW
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
Symbol
21
20
30
28
Min
40
35
50
Max
42
60
1.0
50
30
—
1.0
30
40
120
56
Unit
80
70
100
105
150
140
200
V
V
Maximum
Reverse
Forward
Leakage
Current
Average
Voltage
Rectified
Current
I
R
—
—
—
µAdc
A
Peak Forward Surge Current 8.3 ms single half sine-wave
(V
R
= 75Vdc)
Vdc
-55 to +150
mV
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
Typical Thermal Resistance (Note 2)
Reverse Breakdown Voltage
Typical Junction Capacitance (Note 1)
superimposed on rated load (JEDEC method)
A
(I
BR
= 100
µAdc)
Operating Temperature Range
Forward Voltage
Storage Temperature Range
V
(BR)
75
-55 to +125
V
F
—
0.50
℃
-
65
to +175
715
(I
F
= 1.0 mAdc)
Maximum Forward Voltage at 1.0A DC
(I
F
= 10 mAdc)
CHARACTERISTICS
(I
F
= 50 mAdc)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
(I
F
= 150 mAdc)
Maximum Average Reverse Current at @T A=25℃
Diode Capacitance
@T A=125℃
Rated DC Blocking Voltage
(V
R
= 0, f = 1.0 MHz)
V
F
I
R
—
—
—
–-
—
—
—
855
1000
0.70
1250
2.0
1.75
6.0
45
0.85
0.5
10
0.9
0.92
V
C
D
V
FR
t
rr
Q
S
pF
Vdc
ns
pC
m
Forward Recovery Voltage
(I
F
1 MHZ and
t
r
= 20ns )
1- Measured at
= 10 mAdc,
applied reverse voltage of 4.0 VDC.
2- Thermal
Reverse Recovery Time
to Ambient
Resistance From Junction
NOTES:
(I
F
= I
R
= 10 mAdc, R
L
= 50
Ω)
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0Vdc, R
L
= 500
Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
