WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
OFF CHARACTERISTICS
•
High surge capability.
•
Guardring for overvoltage protection.
Characteristic
Symbol
•
Ultra high-speed switching.
Collector-Emitter Breakdown Voltage
metal silicon junction.
V(BR)
CEO
•
Silicon epitaxial planar chip,
•
(I
C
=1.0mA)
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Emitter-Base Breakdown Voltage
V(BR)
EBO
Halogen free product for packing code suffix "H"
General Purpose Transistors
Features
FM120-M
9014xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
SOD-123H
otherwise noted)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
45
Typ
-
Max
-
Unit
V
0.071(1.8)
0.056(1.4)
5
-
-
V
(I
E
=100
A)
Mechanical
data
V(BR)
CBO
,
Collector-Base Breakdown Voltage
•
Epoxy : UL94-V0 rated flame retardant
(I
C
=100
50
0.031(0.8) Typ.
-
-
0.040(1.0)
0.024(0.6)
V
•
A)
Case : Molded plastic, SOD-123H
•
Terminals :Plated terminals, solderable per MIL-STD-750
I
Method 2026
CBO
0.031(0.8) Typ.
Collector Cutoff Current (V
CB
=40V)
-
-
100
100
nA
nA
Emitter Cutoff Current (V
EB
=3V)
cathode band
•
Polarity : Indicated by
ON CHARACTERISTICS
DC Current Gain
I
EBO
Dimensions in inches and (millimeters)
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
150
-
1000
(I
C
=1mA, V
CE
=5V)
ambient temperature unless otherwise specified.
H
FE
Ratings at 25℃
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Emitter Saturation Voltage
(I
C
=100mA,I
B
=5mA)
Marking Code
For capacitive load, derate current by 20%
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
CE
-
-
0.3
V
Maximum
NOTE:
Recurrent Peak Reverse Voltage
*
Q
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
R
RRM
V
RMS
200~400
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
S
13
30
21
30
14
40
T
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
H
FE
150~300
300~600
20
14
400~1000
40
28
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
