WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
FEATURE
•
Guardring
current capacity in
protection.
High
for overvoltage
compact package.
•
Ultra
I
high-speed switching.
C
=1.5A.
•
Silicon epitaxial planar chip, metal silicon junction.
Epitaxial planar type.
•
Lead-free parts meet environmental standards of
PNP complement:
MIL-STD-19500 /228
8550H
We declare that the material
"G"
•
RoHS product for packing code suffix
of product compliance with RoHS requirements.
Pb-Free package is available
Halogen free product for packing code suffix "H"
8550HXLT1
FM120-M
THRU
General Purpose Transistors
Features
FM1200-M
Pb Free Product
Package outline
SOD-123H
PNP Silicon
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
COLLECTOR
0.040(1.0)
0.024(0.6)
3
Mechanical data
RoHS product for packing code suffix ”G”
Halogen free product for packing
•
Epoxy : UL94-V0 rated flame retardant
code suffix “H”
•
Case : Molded plastic, SOD-123H
,
DEVICE MARKING AND
•
Terminals :Plated terminals,
ORDERING INFORMATION
solderable per MIL-STD-750
Device
Method 2026
Marking
8550HQLT1
1HD
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Y2
8550HRLT1
•
Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Shipping
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Emitter-Base Voltage
RATINGS
Marking Code
Collector Current-continuoun
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
THERMAL CHARACTERISTICS
Pr
el
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Emitter Voltage
V
CEO
For capacitive load, derate current by 20%
Collector-Base Voltage
V
CBO
25
V
40
V
V
EBO
5
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1500
mAdc
16
12
I
C
13
14
15
18
10
115
120
20
30
40
50
60
80
100
150
200
Volts
V
RRM
V
RMS
V
DC
14
20
Symbol
30
21
ina
Max
Unit
ry
Max
40
225
1.8
28
35
50
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
Characteristic
Maximum DC Blocking Voltage
Unit
60
mW
mW/°C
°C/W
42
1.0
30
40
120
56
80
70
100
105
150
140
200
Volts
Volts
Total Device Dissipation FR-5
Maximum Average Forward Rectified Current
Board,(1)
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
P
D
Amps
T
A
=25°C
Derate above 25°C
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
I
FSM
℃/W
PF
℃
℃
Amps
Typical Thermal Resistance (Note 2)
R
Thermal Resistance,Junction to Ambient
ΘJA
Total Device Dissipation
Operating Temperature Range
Alumina Substrate,(2) TA=25°C
Storage Temperature Range
C
J
T
J
R
θ
J A
556
-55 to +150
P
D
-55 to +125
300
2.4
mW
-
65
to +175
mW/°C
0.70
°C/W
TSTG
Derate above 25°C
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
Thermal Resistance,Junction to Ambient
V
F
Rated DC Blocking Voltage
R
θ
J A
T
j,
T
S
t
g
0.50
417
0.85
0.5
10
0.9
0.92
Volts
Maximum Average Reverse Current at
Storage Temperature
Operating
Junction and
@T A=25℃
@T A=125℃
I
R
-55 to +150
°C
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-07
2012-06
WILLAS
WILLAS ELECTRONIC CORP.
ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
