SOT-23 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
(NPN)
•
Low profile surface mounted application in order to
WILLAS
FM120-M
8050SLT1
THRU
FM1200-M
PACKAGE
Pb Free Prod
Features
Package outline
SOD-123H
FEATURES
•
Low power loss, high efficiency.
•
package is available
Pb-Free
High current capability, low forward voltage drop.
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen
Ultra
product for
switching.
code suffix “H”
•
free
high-speed
packing
•
Silicon epitaxial planar chip, metal silicon junction.
Collector Current: I
C
=0.5A
environmental standards of
•
Lead-free parts meet
MIL-STD-19500 /228
optimize board space.
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
•
RoHS
MARKING: J3Y
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
•
Epoxy : UL94-V0 rated flame retardant
Parameter
•
Case : Molded plastic, SOD-123H
Collector-Base Voltage
V
CBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CEO
I
C
P
C
T
j
Collector-Emitter Voltage
Method 2026
Mechanical data
Value
0.031(0.8) Typ.
Unit
V
V
A
W
℃
℃
40
25
0.5
0.3
150
-55-150
0.031(0.8) Typ.
V
EBO
Emitter-Base
by cathode
•
Polarity : Indicated
Voltage
band
Collector Current
•
Mounting Position : Any
-Continuous
•
Weight : Approximated 0.011 gram
Collector Dissipation
Junction Temperature
5
V
Dimensions in inches and (millimeters)
Storage Temperature
T
stg
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless
For capacitive load, derate current by 20%
Marking
Parameter
Code
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
otherwise specified)
Test conditions
12
13
14
20
30
40
28
40
20
30
15
Min
16
50
60
35
40
50
Symbol
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Typ
18
Collector-base breakdown voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
V
(BR)CBO
V
RMS
V
DC
V
RRM
I
C
14
100
μ
A, I
E
=0
=
21
80
56
80
Max
10
100
70
100
Unit
115
V
105
V
150
150
120
200
140
200
42
60
1.0
30
40
120
Collector-emitter breakdown voltage
I
O
V
(BR)EBO
Emitter-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
I
C
=1mA, I
B
V
(BR)CEO
= 0
I
E
=100
μ
A, I
C
=0
V
CB
=40 V ,
I
E
0
=
25
5
V
Collector cut-off current
(Note 2)
Typical Thermal Resistance
Collector cut-off current
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
I
CBO
ΘJA
R
I
CEO
T
J
I
EBO
V
H
FE(1)
F
@T A=125℃
H
FE(2)
C
J
0.1
μ
A
-55
I
=
+125
V
CB
= 20V ,
to
E
0
-
65
to +175
-55
0.1
+150
μ
A
to
TSTG
Emitter cut-off current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
DC current gain
Rated DC Blocking Voltage
= 0
V
EB
= 5V , I
C
0.50
V
CE
= 1V, I
C
= 50mA
0.70
120
0.1
0.85
350
μ
A
0.9
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
0.92
I
R
0.5
10
V
CE
= 1V, I
C
= 500mA
I=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
= 6V, I
C
= 20mA
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
V
CE(sat)
V
BE(sat)
f
T
0.6
1.2
150
V
V
MHz
Transition frequency
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
2012-06
120-200
WILLAS ELECTRONIC CO
200-350
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
