1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better
MOSFET
N-channel
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize
FEATURES
board space.
•
Low power loss, high efficiency.
on-resistance
High
•
Low
current capability, low forward voltage drop.
High
switching speed
•
Fast
surge capability.
Guardring for
drive makes this device ideal for portable equipment
•
Low voltage
overvoltage protection.
•
Ultra high-speed switching.
Silicon
designed drive circuits
•
Easily
epitaxial planar chip, metal silicon junction.
Lead-free parts meet
•
Easy to parallel
environmental standards of
MIL-STD-19500 /228
Pb-Free package is available
•
RoHS product for packing code suffix "G"
Halogen free product for packing
code suffix
RoHS product for packing
code suffix "H"
”G”
Mechanical
product for packing code suffix “H”
Halogen free
data
•
Epoxy : UL94-V0 rated flame retardant
Marking: KN
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
MOSFET MAXIMUM RATINGS (T
a
=
per MIL-STD-750
•
Terminals :Plated terminals, solderable
25°C unless otherwise noted)
SOT-323 Plastic-Encapsulate
MOSFETS
Features
WILLAS
FM120-M
2SK3018WT1
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
SOT-323
3
1
0.012(0.3) Typ.
2
0.071(1.8)
0.056(1.4)
0.146(3.7)
0.130(3.3)
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
Equivalent circuit
0.031(0.8) Typ.
Symbol
Method
Parameter
2026
Value
30
±20
0.1
Units
V
V
A
Dimensions in inches and (millimeters)
V
DS
•
Polarity : Indicated by cathode band
Drain-Source voltage
V
GSS
I
D
P
D
•
Mounting Position : Any
Gate-Source Voltage
•
Weight : Approximated 0.011 gram
Continuous Drain Current
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
T
J
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
For
T
stg
capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Power Dissipation
0.2
W
150
-55-150
13
30
21
14
40
28
40
℃
℃
FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
R
θJA
Marking Code
SYMBOL
FM120-M
RATINGS
Thermal Resistance
from
Junction to Ambient
H FM130-MH
FM140-MH FM150-MH FM160-MH
625
℃
/W
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
V
RMS
I
O
14
35
42
12
20
15
50
50
16
60
18
80
56
10
100
70
115
150
105
120
200
140
200
Volts
Volts
Volts
Amps
Parameter
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol
DC
Test
20
Condition
30
V
V
(BR)
DSS
V
GS
= 0V, I
D
= 10µA
I
DSS
I
FSM
V
DS
=30V,V
GS
= 0V
Min
60
1.0
30
30
40
0.8
120
Typ
80
Max
100
Units
150
V
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
℃/W
PF
℃
℃
0.2
µA
nA
V
Ω
Ω
mS
0.9
0.92
Gate –Source leakage current
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Gate Threshold Voltage
Operating Temperature Range
Storage Temperature Range
Drain-Source On-Resistance
I
GSS
R
ΘJA
V
GS
=±20V, V
DS
= 0V
V
GS(th)
C
J
V
DS
= 3V, I
D
=100µA
T
J
-55 to +125
TSTG
R
DS(on)
±500
V
GS
= 4V, I
D
=10mA
V
GS
=2.5V,I
D
=1mA
-55 to +150
1.5
8
-
65
to +175
13
0.70
Maximum Forward Voltage at 1.0A DC
Forward Transconductance
CHARACTERISTICS
g
FS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
I
R
V
DS
=3V, I
D
= 10mA
0.50
20
0.85
0.5
10
Volts
mAmps
Dynamic Characteristics*
Maximum Average Reverse Current at @T A=25℃
Rated DC
Capacitance
Input
Blocking Voltage
@T A=125℃
iss
C
13
9
4
pF
pF
pF
Output
NOTES:
Capacitance
C
oss
C
rss
V
DS
=5V,V
GS
=0V,f =1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V, V
DD
=5V,
I
D
=10mA, Rg=10Ω, R
L
=500Ω
15
35
80
80
ns
ns
ns
ns
2012-06
2012-0
*These parameters have no way to verify.
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
