SOT-89
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1.0A
Plastic-Encapsulate Transistors
SOD-123
TRANSISTOR (NPN)
design, excellent power dissipation offers
•
Batch process
FEATURES
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Low
optimize board space.
V
CE(sat)
.V
CE(sat)
=0.16V(Typ.)(I
C
/I
B
=2A/0.2A)
•
Low power loss, high
available
Pb-Free package is
efficiency.
•
High current capability, low forward voltage drop.
RoHS product for packing code suffix ”G”
•
High surge capability.
•
Guardring for overvoltage
packing
Halogen free product for
protection.
code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Value
Symbol
Parameter
Unit
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
2SD1766
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base
data
Mechanical
Voltage
40
V
0.040(1.0)
0.024(0.6)
Epoxy : UL94-V0
Voltage
•
Collector-Emitter
rated flame retardant
32
V
Case : Molded plastic,
•
Emitter-Base Voltage
SOD-123H
5
V
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Collector Current -Continuous
Method 2026
2
A
•
Collector
:
dissipation
cathode band
500
Polarity Indicated by
150
Mounting Position : Any
•
Junction Temperature
•
Storage
:
Temperature
0.011 gram
-55-150
Weight Approximated
mW
℃
℃
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
For capacitive load, derate current by 20%
Test conditions
Min
Typ
Max
Unit
RATINGS
Collector-base breakdown voltage
Marking Code
Maximum Recurrent Peak Reverse Voltage
Collector-emitter breakdown voltage
SYMBOL
FM120-M
FM130-MH
FM140-MH FM150-MH FM160-MH
40
V
(BR)CBO
I
C
=50μA,
H
I
E
=0
FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
V
(BR)CEO
V
RRM
V
RMS
12
13
20
I
C
=1mA, I
B
=0
30
14
21
14
40
28
40
15
50
35
50
16
60
32
42
60
5
1.0
30
40
82
18
80
56
80
10
100
70
100
115
150
V
105
120
200
140
200
Emitter-base breakdown voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Collector cut-off current
Rectified Current
Maximum RMS Voltage
V
(BR)EBO
DC
I
E
=50μA, I
C
=0
20
30
V
I
CBO
I
O
V
CB
=20V, I
E
=0
V
150
μA
μA
1
1
Peak Forward Surge Current 8.3 ms single half sine-wave
I
EBO
I
FSM
V
EB
=4V, I
C
=0
Emitter cut-off current
superimposed on rated load (JEDEC method)
DC
Typical Thermal Resistance (Note 2)
current gain
R
h
FE(1)
ΘJA
V
CE
=3V, I
C
=500mA
-55 to
T
V
CE(sat)
J
I
C
=2A, I
B
=0.2A
+125
TSTG
Typical Junction Capacitance (Note 1)
Storage Temperature Range
C
J
120
100
390
V
MHz
0.9
pF
0.92
Operating Temperature Range
Collector-emitter saturation voltage
-
65
to +175
-55 to +150
0.8
Transition frequency
f
T
V
CE
=5V, I
C
=50mA, f=100MHz
0.70
0.5
10
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A
Collector output capacitance
DC
Maximum Average Reverse Current at @T A=25℃
CLASSIFICATION OF h
FE(1)
0.50
C
ob
V
F
V
CB
=10V, I
E
=0, f=1MHz
@T A=125℃
0.85
30
Rated DC Blocking Voltage
I
R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Rank
P
NOTES:
Q
120-270
DBQ
R
180-390
DBR
Range
Marking
2- Thermal Resistance From Junction to Ambient
82-180
DBP
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
