WILLAS
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
2SB766A
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
TRANSISTOR(PNP)
surface mounted application in order to
•
Low profile
better reverse leakage current and thermal resistance.
optimize board space.
•
Low
FEATURES
power loss, high efficiency.
•
High current capability, low forward voltage drop.
Large
High surge
power dissipation P
C
•
collector
capability.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
RoHS
Ultra high-speed switching.
product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix
of
•
Lead-free parts meet environmental standards
“H”
MIL-STD-19500 /228
•
RATINGS (T
a
=25℃ unless otherwise noted)
MAXIMUM
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-89
1. BASE
0.071(1.8)
0.056(1.4)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Mechanical data
Parameter
Value
Unit
2. COLLECTOR
1
2
3
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0
Voltage
Collector-Base
rated flame retardant
-60
V
•
Case : Molded plastic, SOD-123H
Collector-Emitter Voltage
-50
V
,
•
Terminals :Plated terminals, solderable
-5
MIL-STD-750
per
Emitter-Base Voltage
V
•
Polarity : Indicated by cathode band
Collector Power
: Any
500
•
Mounting Position
Dissipation
Junction Temperature
150
•
Weight : Approximated 0.011 gram
Storage Temperature
Collector Current -Continuous
Method 2026
0.040(1.0)
0.024(0.6)
3. EMITTER
0.031(0.8) Typ.
Ratings at
CHARACTERISTICS (T
a
otherwise specified.
ELECTRICAL
25℃ ambient temperature unless
=25℃ unless otherwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Symbol
Parameter
RATINGS
im
12
13
= 0
30
Ic=-2mA,I
B
V
(BR)CEO
RRM
20
V
-55~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ina
mW
℃
Test conditions
14
40
28
40
15
50
35
50
FSM
V
CE
=-10V,I
C
I
= -500mA
-1
A
Dimensions in inches and (millimeters)
Min
-60
16
-50
60
Typ
18
80
56
80
Max
10
100
70
100
-0.1
Unit
V
V
150
V
105
150
μA
115
120
200
140
200
Collector-emitter breakdown voltage
Maximum Recurrent Peak Reverse Voltage
Emitter-base
RMS Voltage
voltage
Maximum
breakdown
Maximum DC Blocking Voltage
Collector cut-off current
Marking Code
Pr
el
Collector-base breakdown voltage
=
V
(BR)CBO
Ic=-10μA,I
E
0
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
= 0
21
V
(BR)EBO
RMS
I
E
=-10μA,I
C
14
V
-5
42
60
1.0
85
30
20
= 0
30
I
CBO
V
DC
V
CB
=-20V,I
E
Maximum Average Forward Rectified Current
= 0
I
EBO
I
O
V
EB
=-4V,I
C
Emitter cut-off current
-0.1
340
μA
DC current gain
rated load (JEDEC method)
superimposed on
Typical Thermal Resistance (Note 2)
Peak Forward Surge Current 8.3 ms single half sine-wave
h
FE(1)
= -1A
V
CE
=-5V,I
C
h
FE(2)
R
ΘJA
50
Collector-emitter saturation
(Note 1)
Typical Junction Capacitance
voltage
Base-emitter saturation voltage
Transition frequency
Storage Temperature Range
CHARACTERISTICS
Collector output capacitance
Maximum Forward Voltage at 1.0A DC
Operating Temperature Range
=
V
CE(sat)
C
J
I
C
=-500mA,I
B
-50mA
f
T
TSTG
=
V
BE(sat)
T
J
I
C
=-500mA,I
B
-50mA
-55 to +125
40
120
-0.2
-0.4
-1.2
V
V
MHz
V
CE
=-10V,I
C
-50mA,f 200MHz
= =
0.50
0.70
-
65
to +175
-0.85
200
-55 to +150
= 0,f 1MHz
V
CB
=-10V,I
=
20
30
pF
C
ob
SYMBOL
FM120-MH
E
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.85
0.9
0.92
CLASSIFICATION OF h
FE(1)
Rated DC Blocking Voltage
Rank
NOTES:
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
Q
R
120-240
S
170-340
85-170
Range
Thermal Resistance From Junction to Ambient
2-
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
MAKING
BQ
BR
BS
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
