SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
2SB1386
THRU
FM1200-M
Pb Free Product
Features
Package outline
Outline Drawing
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
.181(4.60)
.173(4.39)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
Method 2026
(1.55)REF
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.167(4.25)
Marking Code
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.154(3.91)
V
RRM
.023(0.58)
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
13
30
21
30
.102(2.60)
.091(2.30)
14
15
40
50
28
40
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
14
V
RMS
.016(0.40)
20
Vo
Vo
Am
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.031(0.8)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
P
-
65
to +175
.060TYP
(1.50)TYP
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
.017(0.44)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.014(0.35)
.118TYP
V
F
I
R
0.50
0.70
0.85
0.9
0.92
.197(0.52)
.013(0.32)
℃
UN
(3.0)TYP
@T A=25℃
@T A=125℃
Vo
0.5
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
Rev.C
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS [ WILLAS ELECTRONIC CORP ]
