WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOT-89 Plastic-Encapsulate Transistors
200V
SOD-123
1000
FM120-M
2SB1188
FM1200-M
I
C
THRU
PACKAGE
h
FE
Static Characteristic
-0.7
——
Pb Free Product
better reverse leakage current and thermal resistance.
-1.8mA
-0.5
•
Low profile surface mounted application in order to
-1.6mA
optimize board space.
-0.4
-1.4mA
•
Low power loss, high efficiency.
drop.
•
High current capability, low forward voltage
-1.2mA
-0.3
•
High surge capability.
-1.0mA
-0.8mA
•
Guardring for overvoltage protection.
-0.2
-0.6mA
•
Ultra high-speed switching.
-0.4mA
-0.1
•
Silicon epitaxial planar chip, metal silicon junction.
I
B
=-0.2mA
•
Lead-free parts meet environmental standards of
-0.0
MIL-STD-19500 /228
-0
-1
-2
-3
-4
-5
-6
for packing code suffix "G"
•
RoHS product
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Halogen free product for packing code suffix "H"
I
C
COLLECTOR CURRENT
(A)
h
FE
-0.6
•
Batch process design, excellent power dissipation offers
-2.0mA
Features
COMMON EMITTER
T
a
=25
℃
Package outline
T
a
=100
℃
T
a
=25
℃
SOD-123H
DC CURRENT GAIN
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
COMMON EMITTER
V
CE
= -3V
10
-5
-10
-100
-1000
-2000
COLLECTOR CURRENT
I
C
(mA)
V
Mechanical data
-1000
CEsat
——
I
C
-2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
-100
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-1000
0.031(0.8) Typ.
Method 2026
T
a
=25
℃
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
℃
T =100
-10
•
Weight : Approximated 0.011 gram
a
Dimensions in inches and (millimeters)
T
a
=100
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
β=10
-100
-0.1
-1
-10
-100
-1000 -2000
T
a
=25
℃
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
-1
Single phase
-1
half wave, 60Hz, resistive of inductive load.
-1000 -2000
-10
-100
COLLECTOR CURREMT I
C
(mA)
For capacitive load, derate current by 20%
RATINGS
I
C
——
Marking Code
(mA)
-2000
COLLECTOR CURREMT
I
C
(mA)
V
BE
C
ob
/C
ib
—— V
CB
/V
EB
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
-100
Maximum DC Blocking Voltage
-1000
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
(pF)
300
14
40
28
40
15
50
35
50
C
ib
16
60
42
60
1.0
30
40
120
18
80
56
80
10
f=1MHz
I
E
=0/I
100
C
=0
70
T
a
=25
℃
115
150
105
150
120
200
140
200
Volts
Volts
Volts
21
100
COLLECTOR CURRENT
T=
a
10
0
℃
T=
a
25
℃
CAPACITANCE
Maximum Average Forward Rectified Current
I
O
I
FSM
R
ΘJA
C
J
COMMON EMITTER
T
J
V
CE
= -3V
C
30
C
ob
100
I
C
Amps
-10
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
10
Amps
Typical Thermal Resistance (Note 2)
-1
Operating Temperature Range
-0.1
Storage Temperature Range
Typical Junction Capacitance (Note 1)
-55 to +125
-1200
1
-0.1
-55 to +150
-10
-20
℃/W
PF
℃
℃
-
65
to +175
-1
600
-0
-200
-400
-600
-800
TSTG
-1000
BASE-EMMITER VOLTAGE V
BE
(mV)
REVERSE VOLTAGE
V
(V)
CHARACTERISTICS
P
C
Maximum Forward Voltage at 1.0A DC
——
COLLECTOR POWER DISSIPATION
P
C
(mW)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
T
a
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
500
@T A=125℃
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
400
2- Thermal Resistance From Junction to Ambient
300
200
100
0
2012-06
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
