欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA1036KXLT1 参数 Datasheet PDF下载

2SA1036KXLT1图片预览
型号: 2SA1036KXLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率晶体管 [Medium Power Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 335 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号2SA1036KXLT1的Datasheet PDF文件第1页浏览型号2SA1036KXLT1的Datasheet PDF文件第2页浏览型号2SA1036KXLT1的Datasheet PDF文件第3页  
Medium Power
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Transistor
(*32V,
*0.5A)
1.0A SURFACE MOUNT
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
2SA1036KxLT1
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOT-23
.006(0.15)MIN.
SOD-123H
Low profile surface mounted application in order to
optimize board space.
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.083(2.10)
.110(2.80)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.063(1.60)
.047(1.20)
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
.122(3.10)
Silicon epitaxial planar chip, metal silicon junction.
.106(2.70)
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
.080(2.04)
.070(1.78)
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
 
.004(0.10)MAX.
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
.055(1.40)
.035(0.89)
V
RRM
V
RMS
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
 
20
V
DC
.020(0.50)
I
O
.012(0.30)
 
I
FSM
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
R
ΘJA
Dimensions in inches and (millimeters)
 
C
J
T
J
TSTG
 
-55 to +150
-55 to +125
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
0.037
0.95
V
F
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
0.50
0.037
0.95
0.70
0.5
10
0.85
0.9
0.92
 
V
@T A=125℃
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
 
 
0.035
0.9
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP