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1SS400CST5G 参数 Datasheet PDF下载

1SS400CST5G图片预览
型号: 1SS400CST5G
PDF下载: 下载PDF文件 查看货源
内容描述: 开关二极管 [SWITCHING Diodes]
分类和应用: 二极管开关
文件页数/大小: 2 页 / 565 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号1SS400CST5G的Datasheet PDF文件第2页  
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
1SS400CST5G
THRU
FM1200-M
Pb Free Product
LESHAN RADIO COMPANY, LTD.
SWITCHING Diodes
Features
SOD-923
Package outline
.006(0.15)
.01(0.25)
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Applications
. 0 3 0 ( 0 .7 5 )
Low profile surface mounted application in order to
. 03 3 ( 0 . 8 5 )
High
optimize board space.
speed switching
L1SS400GT1G
Applications
0.146(3.7)
Low
Features
power loss, high efficiency.
High speed switching
0.130(3.3)
0.012(0.3) Typ.
High current capability, low forward voltage drop.
Features
1) Extremely small surface mounting type.
1
.022(0.55)
High surge capability.
.026(0.65)
1) Extremely small surface mounting type.
2) High Speed.
overvoltage protection.
Guardring for
2) High Speed.
0.071(1.8)
Ultra high-speed
3) High reliability.
switching.
3) High reliability.
0.056(1.4)
2
.037(0.95)
Silicon epitaxial planar chip, metal silicon junction.
Construction
.041(1.05)
Construction
Lead-free parts meet environmental standards of
epitaxial planar
Silicon
SOD -
723
MIL-STD-19500 /228
Silicon epitaxial planar
We declare that the material of product
RoHS product for packing code suffix "G"
Pb-Free package is available
Halogen free product for packing code suffix "H"
compliance with RoHS requirements.
1
2
RoHS product for packing code suffix "G"
Device Marking
CATHODE
ANODE
Mechanical data
.012(0.30)
0.040(1.0)
L1SS400GT1G=3
Halogen free product for packing code suffix "H"
0.024(0.6)
Epoxy : UL94-V0 rated flame retardant
Case : Molded
Marking code: 3
plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
Dimensions in inches and (millimeters)
Terminals :Plated terminals, solderable per MIL-STD-750
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
.014(0.36)
Method 2026
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate
V
R
 
DC reverse voltage
current by 20%
Polarity : Indicated by cathode band
Mounting Position : Any
Mean
100
Maximum Ratings and Electrical Characteristics,
rectifying current
Single Diode
I
@T
A
=25℃
Surge current (1s)
I
500
Weight : Approximated 0.011 gram
Junction temperature
Tj
125
Parameter
Storage temperature
T
Limits
– 55 ~ +125
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
90
Peak reverse voltage
V
RM
O
surge
stg
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Symbol
V
RM
V
R
I
FM
.017(0.43)
Limits
90
Dimensions
80
225
in
Unit
V
inches
V
and
mA
mA
mA
°C
°C
.003(0.07)
.007(0.17)
.022(0.55)
.026(0.65)
(millimeters)
Unit
V
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Forward voltage
Symbol
V
F
Peak forward current
Marking Code
Maximum RMS Voltage
RATINGS
I
FM
I
O
SYMBOL
Reverse current
I
R
0.1
µA
V
R
=80V
FM180-MH FM1100-MH
f=1MHz
FM120-M
H FM130-MH
FM140-MH
T
FM150-MH FM160-MH
3.0
Capacitance between terminals
C
0.72
pF
V
R
=0.5V ,
FM1150-MH FM1200-MH
VR
=6V , I
F
=10mA , R
L
=100
Reverse recovery time
4
18
ns
12
13
14
t
rr
15
16
10
115
120
80
Min.
Typ.
Max.
1.2
Unit
V
Conditions
I
F
=100mA
V
.006(0.15)
.01(0.25)
Switching diode
225
mA
U
Mean rectifying current
Maximum DC Blocking Voltage
Surge current (1s)
 
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
I
O
20
14
20
Device
30
21
30
40
28
Marking
3
100
50
35
60
42
60
1.0
 
30
40
120
80
56
80
100
70
100
mA
mA
150
105
150
200
140
200
V
V
Junction temperature
Storage temperature
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
V
DC
I
surge
ORDRING INFORMATION
40
50
500
Shipping
V
T
 
j
L1SS400GT1G
I
FSM
125
4000/Tape&Reel
A
 
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
T
stg
R
ΘJA
C
J
T
J
 
-55~+125
 
 
 
-55 to +125
 
-55 to +150
P
Operating
Ratings
Range
Electrical
Temperature
@T
A
=25℃
Storage Temperature Range
 
Parameter
CHARACTERISTICS
Symbol
V
F
V
F
I
R
C
T
t
rr
I
R
TSTG
Min.
Typ.
Max.
0.50
1.2
Unit
V
0.70
-
65
to +175
Conditions
I
F
=100mA
0.85
V
R
=80V
0.9
0.92
 
Forward
Forward Voltage at 1.0A DC
Maximum
voltage
Reverse
Blocking Voltage
Rated DC
current
 
1/3
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.1
3.0
4
μA
0.5
10
m
NOTES:
Capacitance between terminals
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
pF
ns
V
R
=0.5V,f=1MHZ
V
R
=6V,I
F
=10mA,R
L
=100
Ω
Reverse
Resistance From Junction to Ambient
2- Thermal
recovery time
 
 
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.