SOD-123 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
1N4448W
THRU
FM1200-M
Pb Free Product
Package outline
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Forward Characteristics
•
Low power loss, high efficiency.
300
•
High current capability, low forward voltage drop.
•
High surge capability.
100
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
30
Silicon epitaxial planar chip, metal silicon junction.
•
•
Lead-free parts meet environmental standards of
10
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a
10
0
℃
Typical Characteristics
10000
3000
SOD-123H
0.146(3.7)
Characteristics
0.130(3.3)
0.012(0.3) Typ.
Reverse
(mA)
(nA)
1000
300
100
30
10
0.031(0.8) Typ.
T
a
=100
℃
0.071(1.8)
0.056(1.4)
I
F
FORWARD CURRENT
Mechanical data
T =2
a
5
℃
3
REVERSE CURRENT I
R
T
a
=25
℃
0.040(1.0)
0.024(0.6)
•
1
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
0.3
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0.0
Polarity
0.031(0.8) Typ.
3
1
Method 2026
1.2
1.6
0.4
0.8
•
: Indicated by cathode band
FORWARD VOLTAGE V
F
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
0
20
Dimensions in inches
60
(millimeters)
40
80
and
100
(V)
REVERSE VOLTAGE
V
R
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Capacitance Characteristics
Single
1.6
phase half wave, 60Hz, resistive of inductive load.
T
a
=25
℃
For capacitive load, derate current by 20%
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Marking Code
Maximum Recurrent Peak Reverse Voltage
1.4
600
Power Derating Curve
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
500
P
D
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
12
12
20
14
20
(mW)
RATINGS
f=1MHz
13
30
21
30
POWER DISSIPATION
Maximum RMS Voltage
1.2
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
1.0
400
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
300
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
0.8
Typical Thermal Resistance (Note 2)
200
Am
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0
4
0.6
8
100
-55 to +150
100
125
150
℃
P
-55 to +125
20
0
0
25
50
-
65
to
75
+175
AMBIENT TEMPERATURE
℃
TSTG
16
℃
REVERSE VOLTAGE
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
V
R
(V)
a
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
T
(
℃
)
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
R
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
