SOD-323 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
1N4448WS
FM1200-M
Pb Free Product
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
capability.
•
High surge
Forward Characteristics
300
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
100
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
30
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a
10
0
℃
Typical Characteristics
10000
3000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse
Characteristics
0.071(1.8)
0.056(1.4)
(mA)
(nA)
1000
300
100
30
10
3
1
T
a
=100
℃
I
F
FORWARD CURRENT
Mechanical data
Epoxy : UL94-V0 rated flame retardant
•
3
•
Case : Molded plastic, SOD-123H
,
1
•
Terminals :Plated terminals, solderable per MIL-STD-750
T =2
a
5
℃
10
REVERSE CURRENT I
R
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
T
a
=25
℃
0.031(0.8) Typ.
Method 2026
0.3
•
Polarity : Indicated by cathode band
Mounting Position : Any
•
0.1
0.0
0.4
0.8
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1.2
1.6
0
20
40
60
80
100
FORWARD VOLTAGE
V
F
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.6
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
RATINGS
250
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Power Derating Curve
16
60
42
60
1.0
30
40
120
18
80
56
80
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
1.2
T
a
=25
℃
f=1MHz
1.4
(mW)
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
200
14
40
28
40
15
50
35
50
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
P
D
30
Vo
POWER DISSIPATION
150
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
0.8
Storage Temperature Range
1.0
100
-55 to +150
℃
P
-55 to +125
50
-
65
to +175
℃
℃
0.6
Maximum Forward Voltage at 1.0A DC
REVERSE VOLTAGE V
Maximum Average Reverse Current at @T A=25℃
R
Rated DC Blocking Voltage
0
CHARACTERISTICS
4
8
12
0
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
(V)
16
V
F
20
0.50
0
25
@T A=125℃
I
R
0.70
0.85
AMBIENT TEMPERATURE T
a
0.5
10
50
75
100
125
(
℃
)
0.9
150
0.92
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
