WILLAS
1N4150 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol
Ratings
Unit
Reverse Voltage
VR
50
V
Reverse Recovery
trr
4
ns
Time
Power Dissipation
P
500
mW
3.33mW /°C (25°C)
Forward Current
IF
200
mA
Junction Temp.
Tj
-65 to 200
°C
Storage Temp.
Tstg
-65 to 200
°C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
SC
1N4150
VO
0.1AMP Sch
Pb Free Product
.022(0.55)
.018(0.45)
FEATURES
Dimensions (DO-35
)
* Extremely Low VF
* Extremely thin package
* Low stored charge
* Majority carrier conduction
1. 0 2 ( 26 . 0 )
MIN.
.0
.153(3.6)
.132(3.0)
.112 (2.85)
.100 (2.55)
.059 (1.5)
.043 (1.1)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
* Terminal : Solder plated,
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
1. 02 ( 26 .0 )
MIN.
solderable per
MIL-STD-750,
Dim ensions in millim eters
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
Markin
Symbol
BV
Ratings
50
1.0
Unit
V
IFsurge
A
MAXIMUM RATING AND ELECTRICAL CHAR
Rating 25 C ambient temperature unless otherwise specified.
1.0
Single phase half wave, 60Hz, resistive of inductive load.
IR
For capacitive load, derate current by 20%
Parameter
Cj
Repetitive Peak Reverse Voltage
o
VF
V
uA
0.10
100
Conditions
pF
ns
2.5
I
F
= 10mA DC
trr
Continuous Reverse Voltage
4
Forward Voltage
Reverse Current
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
I
F
= 100mA DC
V
R
= 10V DC
WILLAS ELECTRONIC CORP.
.004 (0.1)
MECHANICAL DATA
.087(2.2)
Sy
T
WILLAS [ WILLAS ELECTRONIC CORP ]
