1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FAST SWITCHING DIODE
FEATURES
process design, excellent power dissipation offers
•
Batch
better reverse leakage
Fast Switching Speed
current and thermal resistance.
•
Low profile surface mounted application in order to
Surface Mount Package Ideally Suited for Automatic Insertion
optimize board space.
•
General
loss, high
Switching
For
Low power
Purpose
efficiency.
Applications
•
High current capability, low forward voltage drop.
High Conductance
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
•
Ultra high-speed
packing
RoHS product for
switching.
code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing
standards of
“H”
•
Lead-free parts meet environmental
code suffix
MARKING:
BAV16W=T6,1N4148W=T4
•
RoHS product for packing code suffix "G"
Maximum Ratings and Electrical Characteristics, Single Diode @T
a
=25℃
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
Parameter
Symbol
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
RM
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Method 2026
MIL-STD-19500 /228
SOD-123 Plastic-Encapsulate Diodes
Features
WILLAS
FM120-M
1N4148W
THRU
BAV16W
FM1200-M
Pb Free Product
Package outline
SOD-123
SOD-123H
+
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
-
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
Limit
0.031(0.8) Typ.
Unit
0.031(0.8) Typ.
100
75
53
300
150
2.0
1.0
35
Dimensions in inches and (millimeters)
V
•
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
•
Mounting Position : Any
DC Blocking Voltage
•
Weight : Approximated 0.011 gram
RMS Reverse Voltage
Forward Continuous Current
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
V
mA
mA
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive
I
O
Average Rectified Output Current
of inductive load.
For capacitive load, derate current by 20%
Peak Forward Surge Current @t=1.0μs
RATINGS
Marking Code
Maximum RMS Voltage
@t =1.0s
A
I
FSM
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
Pd
RRM
V
RMS
12
20
14
20
13
30
21
30
14
40
28
40
15
50
500
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
mW
105
120
200
140
200
Maximum Recurrent Peak Reverse Voltage
Power Dissipation
Maximum DC Blocking Voltage
Vol
Thermal Resistance
from
Junction
to
Ambient
Volt
R
DC
V
θJA
I
O
T
j
I
FSM
250
50
150
-55~+150
℃/W
150
℃
Volt
Maximum Average Forward Rectified Current
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
Junction Temperature
Storage Temperature
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
T
STG
R
ΘJA
C
J
T
J
TSTG
Symbol
℃
Am
Electrical Ratings @Ta=25℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
-55 to +125
-55 to +150
℃/W
PF
Max
0.715
Unit
V
℃
Parameter
Storage Temperature Range
Min
Typ
-
65
to +175
Conditions
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
F1
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
F
FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
I =1mA
F
Forward voltage
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
V
F2
F
0.50
0.855
0.70
V
@T A=125℃
V
F3
V
F4
I
R1
I
R
0.5
10
0.85
I =10mA
0.9
0.92
Vol
1.0
1.25
1
25
2
4
V
V
μA
nA
pF
ns
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
mAm
NOTES:
2- Thermal Resistance From Junction to Ambient
Reverse current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I
R2
Capacitance between terminals
Reverse recovery time
C
T
t
rr
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
