万和兴电子有限公司 www.whxpcb.com
AO4437
12V P-Channel MOSFET
General Description
The AO4437 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Product Summary
V
DS
(V) = -12V
I
D
= -11 A (V
GS
= -4.5V)
R
DS(ON)
< 16mΩ (V
GS
= -4.5V)
R
DS(ON)
< 20mΩ (V
GS
= -2.5V)
R
DS(ON)
< 25mΩ (V
GS
= -1.8V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
-12
±8
-11
-9
-20
3
2.1
-55 to 150
Units
V
V
A
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
A
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°
C
T
A
=70°
C
V
GS
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
63
21
Max
40
75
30
Units
°
C/W
°
C/W
C/W
°
Alpha & Omega Semiconductor, Ltd.