MMBTA42
MMBTA43
High-Voltage NPN Transistor
Surface Mount
P b
Lead(Pb)-Free
COLLECTOR
3
3
1
2
1
BASE
2
EMITTER
SOT-23
Maximum Ratings
(T
A
=25°C Unlesso therwise noted)
Rating
Collector-Emitter Voltage
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
V
CEO
Value
300
200
300
200
6.0
6.0
500
Unit
V
Collector-Base Voltage
V
CBO
V
Emitter-Base Voltage
V
EBO
I
C
V
mA
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (Note.1)
TA=25°C
Derate above 25°C
Thermal Resistance, Junctionto Ambient (Note.1)
Total Device Dissipation
Alumina Substrate (Note.2) TA=25°C
Derate above 25°C
Thermal Resistance, Junctionto Ambient (Note.1)
Junctionand Temperature Range
Storage Temperature Range
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
225
1.8
556
300
2.4
417
+150
-55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Device Marking
MMBTA42 = 1D , MMBTA43 = M1E
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://www.weitron.com.tw
WEITRON
1/4
15-Dec-06
WEITRON [ WEITRON TECHNOLOGY ]
