MMBTA42
High-Voltage NPN Transistor
Surface Mount
COLLECTOR
3
SOT-23
3
1
1
BASE
2
EMITTER
2
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
5.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R JA
PD
R JA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Device Marking
MMBTA42=1D
Electrical Characteristics
Off Characteristics
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Max
Unit
Characteristics
Collector-Emitter Breakdown Voltage
(3)
(I
C
=1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=100 Adc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=10 Adc, I
C
=0)
Base Cutoff Current (V
CB
=200 Vdc, I
E
=0)
Emitter Cutoff Current VEB=3V, IC=0
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
IC
BO
I
EBO
300
300
5.0
-
-
-
0.25
0.1
Vdc
Vdc
Vdc
Adc
Adc
-
-
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