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MMBT5550 参数 Datasheet PDF下载

MMBT5550图片预览
型号: MMBT5550
PDF下载: 下载PDF文件 查看货源
内容描述: 高压NPN晶体管 [High Voltage NPN Transistors]
分类和应用: 晶体晶体管高压IOT
文件页数/大小: 5 页 / 318 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
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MMBT5550
MMBT5551
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
( VCB 100 V
dc,
I E=
0
)
( VCB 120 V
dc,
I E=
0
)
I CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
I EBO
100
50
100
50
nAdc
uAdc
( VCB 100 V
dc,
I E=
0
,T
A
= 100 C )
( VCB 100 V
dc,
IE=
0
, T
A
= 100 C )
Emitter Cutoff Current
( VEB 4.0 V
dc,
I C=0 )
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC=1.0 mAdc, VCE=5.0 Vdc)
(IC=10 mAdc, VCE=5.0 Vdc)
(IC=50 mAdc, VCE=5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=10 mAdc, IB=1.0mAdc)
(IC=50 mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10 mAdc, IB=1.0mAdc)
(IC=50 mAdc, IB=5.0mAdc)
Both Types
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
VBE(sat)
-
-
-
hFE
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
VCE(sat)
-
-
-
-
60
80
60
80
20
30
-
-
250
250
-
-
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
1. FR-5=1.0 x 0.75 x 0.062 in
2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%
WEITRON
http://www.weitron.com.tw