MMBT3906
General Purpose Transistor
PNP Silicon
P b
Lead(Pb)-Free
COLLECTOR
3
3
1
BASE
2
EMITTER
1
SOT-23
2
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R
θ
JA
PD
R
θ
JA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Device Marking
MMBT3906=2A
Electrical Characteristics
Off Characteristics
(T
A
=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(3)
(I
C
=-1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-10 µAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=-10 µAdc, I
C
=0)
Base Cutoff Current (V
CE
=-30 Vdc, V
EB
=-3.0 Vdc)
Collector Cutoff Current (V
CE
=-30Vdc, V
EB
=-3.0Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width <300 µS, Duty Cycle <2.0%.
=
=
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
-40
-40
-5.0
-
-
-
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
-
-
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