MMBT2222AT
Plastic-Encapsulate Transistors
NPN Silicon
P b
Lead(Pb)-Free
1
COLLECTOR
3
3
1
2
BASE
2
EMITTER
SC-89
(SOT-523F)
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R
θ
JA
TJ,Tstg
Max
150
833
-55 to +150
Unit
mW
C/W
C
DEVICE MARKING
MMBT2222AT=1P
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
(2)
Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V)
Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
75
6.0
-
-
-
-
-
20
100
V
V
V
nA
nA
WEITRON
http://www.weitron.com.tw
1/6
28-Apr-2010
WEITRON [ WEITRON TECHNOLOGY ]
