ESDA6V8V5 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
V
BR
I
F
V
F
Z
ZT
I
ZK
Z
ZK
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni-Directional
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Characteristic
Peak Power Dissipation (8 X 20 s @ T
A
= 25°C) (Note 1)
Steady State Power - 1 Diode (Note 2)
Thermal Resistance Junction to Ambient
Above 25°C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
ESD Discharge
MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge
Symbol
P
PK
P
D
R
JA
T
Jmax
T
J
T
stg
V
PP
Value
100
300
370
2.7
150
-55 to +150
16
16
9
260
Unit
W
mW
°C/W
mW/°C
°C
°C
kV
Lead Solder Temperature (10 seconds duration)
T
L
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Device
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Min
Nom
Max
Leakage Current
I
RM
@ V
RM
V
RWM
I
RWM
( A)
V
C
Max @ I
PP
V
C
(V)
I
PP
(A)
Typ Capacitance
@ 0 V Bias
(Note 3)
(pF)
Max
V
F
@ I
F
=
200 mA
(V)
5.32
5.89
6.46
5.6
6.2
6.8
5.88
6.51
7.14
3.0
4.0
4.3
1.0
0.5
0.1
10.5
11.5
12.5
10
9.0
8.0
90
80
70
1.3
1.3
1.3
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25°C
Device Marking
Item
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
Marking
Eqivalent Circuit diagram
1
2
3
5
4
VE
WEITRON
http://www.weitron.com.tw
2/3
09-Oct-07
WEITRON [ WEITRON TECHNOLOGY ]
