BC807-16/ BC807-25
BC807-40
General Purpose Transistor
PNP Silicon
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
V CEO
VCBO
VEBO
IC
COLLECTOR
3
MARKING DIAGRAM
3
1
BASE
2
EMITTER
1
2
SOT-23
Value
-45
-50
-5.0
500
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R
q
JA
PD
R
q
JA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Device Marking
BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1
1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
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WEITRON
Rev.A 16-Dec-08
WEITRON [ WEITRON TECHNOLOGY ]
