BAS16W / BAV70W
BAW56W / BAV99W
Maximum Ratings
Characteristic
Reverse Voltage
Forward Current
(EACH DIODE)
Symbol
VR
IF
IFM
BAS16W BAV70W BAW56W BAV99W
75
200
500
70
215
Unit
Volts
mAdc
mAdc
Peak Forward Surge Current
Thermal Characteristics
Characteristic
Total Device Dissipation FR-5
Board *
1
, TA=25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Symbol
P
D
R
q
JA
P
D
R
q
JA
TJ, Tstg
Max
200
1.6
625
300
2.4
417
-55 to + 150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Total Device Dissipation
Alumina Substrate*
2
TA=25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics
Characteristic
(TA=25 C Unless Otherwise Note) (Each Diode)
Symbol
Min
Max
Unit
Off Characteristics
Reverse Breakdown Voltage BAS16W
(IBR=100 µAdc ) BAV70W/BAW56W/BAV99W
Reverse Voltage Leakage Current
VR=75V
VR=70V
BAS16W
BAV70W/BAW56W/BAV99W
VBR
75
70
1.0
2.5
Vdc
VR=25V, TJ=150 C BAS16W/BAW56W/BAV99W
VR=25V, TJ=150 C BAV70W
VR=75V,
VR=70V,
VR=70V,
TJ=150 C BAS16W
TJ=150 C BAW56W/BAV99W
TJ=150 C BAV70W
IR
30.0
60.0
50.0
50.0
100.0
µAdc
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