2SC4081
General Purpose Transistor
NPN Silicon
COLLECTOR
3
3
P b
Lead(Pb)-Free
1
1
2
BASE
2
FEATURES
Excellent hFE linearity
Complements the 2A1576A
SOT-323(SC-70)
EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
V
50
7
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
mA
mW
℃
150
200
PC
TJ
150
Tstg
℃
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
60
50
7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
V
V
ICBO
IEBO
VCB=60V,IE=0
0.1
0.1
560
0.4
μA
μA
Emitter cut-off current
VEB=7V,IC=0
DC current gain
hFE(1)
VCE(sat)
fT
VCE=6V,IC=1mA
120
Collector-emitter saturation voltage
Transition frequency
IC=50mA,IB=5mA
VCE=12V,IC=2mA,f=30MHz
VCB12V,IE=0,f=1MHz
V
180
MHz
pF
Collector output capacitance
Cob
3.5
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
120-270
BQ
180-390
BR
270-560
BS
Range
Marking
WEITRON
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10-Jul-08
WEITRON [ WEITRON TECHNOLOGY ]
