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WCMB2016R4X-FF70 参数 Datasheet PDF下载

WCMB2016R4X-FF70图片预览
型号: WCMB2016R4X-FF70
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16静态RAM [128K x 16 Static RAM]
分类和应用:
文件页数/大小: 11 页 / 214 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCMB2016R4X  
Typical DC and AC Characteristics  
(Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ) Typ, TA = 25°C.)  
Standby Current vs. Supply Voltage  
Operating Current  
vs. Supply Voltage  
3.5  
2.4  
2.0  
1.6  
1.2  
3.0  
2.0  
1.5  
(f=f  
)
max  
1.0  
0.8  
0.5  
0
(f = 1 MHz)  
0.4  
0.0  
1.80  
1.95  
1.65  
1.65  
1.80  
1.95  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Access Time vs. Supply Voltage  
40  
35  
30  
25  
20  
15  
10  
1.65  
1.8  
1.95  
SUPPLY VOLTAGE (V)  
Truth Table  
CE  
H
X
WE  
X
OE  
BHE  
X
BLE  
X
Inputs/Outputs  
High Z  
Mode  
Power  
Standby (ISB  
Standby (ISB  
Active (ICC  
Active (ICC  
X
X
L
L
Deselect/Power-Down  
Deselect/Power-Down  
Read  
)
X
H
H
High Z  
)
L
H
L
L
Data Out (I/OO–I/O15  
)
)
L
H
H
L
Data Out (I/OO–I/O7);  
I/O8–I/O15 in High Z  
Read  
)
L
H
L
L
H
Data Out (I/O8–I/O15);  
I/O0–I/O7 in High Z  
Read  
Active (ICC)  
L
L
L
L
L
H
H
H
L
H
H
H
X
X
L
H
L
L
L
H
L
L
High Z  
High Z  
High Z  
Output Disabled  
Output Disabled  
Output Disabled  
Write  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
)
)
)
L
Data In (I/OO–I/O15  
)
)
L
H
Data In (I/OO–I/O7);  
I/O8–I/O15 in High Z  
Write  
)
L
L
X
L
H
Data In (I/O8–I/O15);  
I/O0 –I/O7 in High Z  
Write  
Active (ICC)  
9
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