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WED3DG637V75D2 参数 Datasheet PDF下载

WED3DG637V75D2图片预览
型号: WED3DG637V75D2
PDF下载: 下载PDF文件 查看货源
内容描述: 64MB- 8Mx64 SDRAM UNBUFFERED [64MB- 8Mx64 SDRAM UNBUFFERED]
分类和应用: 存储动态存储器
文件页数/大小: 5 页 / 82 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号WED3DG637V75D2的Datasheet PDF文件第1页浏览型号WED3DG637V75D2的Datasheet PDF文件第2页浏览型号WED3DG637V75D2的Datasheet PDF文件第3页浏览型号WED3DG637V75D2的Datasheet PDF文件第5页  
W3DG647V-D2  
White Electronic Designs  
OPERATING CURRENT CHARACTERISTICS  
(VCC = 3.3V, 0°CTA70°C)  
Parameters  
Symbol  
Conditions  
Versions  
Units  
Note  
133  
100  
520  
Operating Current  
(One bank active)  
ICC1  
600  
mA  
1
Burst Length = 1  
t
RC ≥ tRC(min)  
IOL = 0mA  
ICC2P  
ICC2PS  
ICC2N  
10  
10  
mA  
mA  
mA  
Precharge Standby Current  
in Power Down Mode  
CKE ≤ VIL(max), tCC = 10ns  
CKE & CK ≤ VIL(max), tCC = ∞  
Precharge Standby Current  
in Non-Power Down Mode  
120  
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns  
Input signals are charged one time during 20  
50  
mA  
mA  
ICC2NS  
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞  
Input signals are stable  
25  
25  
Active standby current in power-  
down mode  
ICC3P  
ICC3PS  
CKE ≥ VIL(max), tCC = 10ns  
CKE & CK ≤ VIL(max), tCC = ∞  
Active standby in current non  
power-down mode  
ICC3N  
200  
mA  
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns  
Input signals are charged one time during 20ns  
ICC3NS  
ICC4  
120  
mA  
mA  
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞  
input signals are stable  
920  
840  
810  
1
2
Operating current (Burst mode)  
Io = mA  
Page burst  
4 Banks activated  
tCCD = 2CK  
Refresh current  
ICC5  
ICC6  
1080  
mA  
mA  
tRC ≥ tRC(min)  
CKE ≤ 0.2V  
Self refresh current  
10  
Notes: 1. Measured with outputs open.  
2. Refresh period is 64ms.  
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCC/VssQ)  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com