Compact Linear Flash
Memory Card - CLF11 Series
White Electronic Designs
WRITE TIMING DIAGRAM
tC(W)
A[25::0]
t
SU(A-WEH)
SU(CE-WEH)
SU(CE)
t
REC(WE)
t
H(CE)
t
t
CE
1
NOTE 1
NOTE 1
OE
tH(OE-WE)
t
SU(A)
tW(WE)
WE
tH(D)
t
SU(OE-WE)
t
SU(D-WEH)
DATA INPUT
NOTE 2
D[15::0](DIN
)
tDIS(WE)
tEN(OE)
tDIS(OE)
t
EN(WE)
NOTE 2
D[15::0](DOUT
)
Notes: 1ꢀ Signal may be high or low in this areaꢀ
2ꢀ When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host systemꢀ
(1,2,3)
DATA WRITE AND ERASE PERFORMANCE
CLF11: VCC = 3V-5V
Parameter
Notes
Min
Typ(1)
200
180
0ꢀ8
Max
Units
µs
Write Buffer Byte program time(time to progꢀ 32Bytes/16Words)
Byte Program time - Using Word/Byte prog command
Block Program Time128kB written using Write to Buffer
Block Erase Time
- J3 device
- J3 device
- J3 device
- J3 device
µs
sec
sec
0ꢀ7
Notes:
1ꢀ Typical: Nominal voltages and TA = 25°Cꢀ
2ꢀ Excludes system overheadꢀ
3ꢀ Valid for all speed optionsꢀ
White Electronic Designs Corporation Marlborough MA (508) 485-4000
8
WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
