PCMCIA Flash Memory Card
FLG Series
White Electronic Designs
CARD SIGNAL DESCRIPTION
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not used in
word access mode. The memory will wrap at the card density boundary (see PINOUT, note 3). The system should not try to
access memory beyond the card density. A25 is the most significant bit. A23 - A25 are not connected.
DQ0 - DQ15
CE1#, CE2#
INPUT/OUTPUT
INPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ0 - Dq7 constitute the lower (even) byte
and DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1 enables even byte accesses, CE2 enables odd byte accesses. Multiplexing A0, CE1 and CE2
allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
WE#
INPUT
INPUT
N.C.
OUTPUT ENABLE: Active low signal gating read data from the memory card.
WRITE ENABLE: Active low signal gating write data to the memory card.
RDY/BSY#
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. This signal is not
connected.
CD1#, CD2#
WP
OUTPUT
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the memory
card. The host shall monitor these signals to detect card insertion (pulled-up on host side).
WRITE PROTECT: Write protect reflects the status of the Write Protect switch on the memory card. WP set to high = write
protected, providing internal hardware write lockout to the Flash array.If card does not include optional write protect switch, this
signal will be pulled low internally indicating write protect = “off”.
VPP1
VPP2
VCC
PROGRAM/ERASE POWER SUPPLY: Provides programming voltages 12.0V for lower byte (D0 - D7) memory components.
PROGRAM/ERASE POWER SUPPLY: Provides programming voltages 12.0V for lower byte (D8 - D15) memory components.
CARD POWER SUPPLY: 5.0V
GND
CARD GROUND
REG#
INPUT
ATTRIBUTE MEMORY SELECT : Active low signal, enables access to Attribute Memory Plane, occupied
by Card Information Structure and Card Registers.
RST#
WAIT#
N.C.
RESET: Active high signal for placing card in Power-on default state. This signal is not connected.
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.
OUTPUT
OUTPUT
OUTPUT
BVD1, BVD2
VS1, VS2
VOLTAGE SENSE: Notifies the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V card has
been inserted.
RFU
RESERVED FOR FUTURE USE
N.C.
NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating
FUNCTIONAL TRUTH TABLE
READ function
Common Memory
Attribute Memory
Function Mode
CE2# CE1# A0 OE# WE#
REG#
D15-D8
High-Z
High-Z
High-Z
D7-D0
High-Z
REG#
D15-D8
High-Z
D7-D0
High-Z
Standby Mode
H
H
H
L
H
L
X
L
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
X
L
L
L
L
Byte Access (8 bits)
Even-Byte
Odd-Byte
High-Z
Even-Byte
Not Valid
Even-Byte
High-Z
L
H
X
X
High-Z
Word Access (16 bits)
Odd-Byte Only Access
L
Odd-Byte Even-Byte
Not Valid
Not Valid
L
H
Odd-Byte
High-Z
WRITE function*
Standby Mode
H
H
H
L
H
L
X
L
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
L
L
L
L
X
X
X
X
X
X
X
Even-Byte
Odd-Byte
Even-Byte
X
Even-Byte
Byte Access (8 bits)
X
X
Even-Byte
X
L
H
X
X
Odd-Byte
Odd-Byte
Word Access (16 bits)
Odd-Byte Only Access
L
L
H
* Require proper programming voltages (Vpp1, Vpp2). Program or Erase with an invalid Vpp should not be attempted.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June, 2003
Rev. 4
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com