欢迎访问ic37.com |
会员登录 免费注册
发布采购

5962-9559504HAX 参数 Datasheet PDF下载

5962-9559504HAX图片预览
型号: 5962-9559504HAX
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 128KX32, 45ns, CMOS, CQFP68, 22.40 MM, 5.08 MM HEIGHT, CERAMIC, QFP-68]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 476 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号5962-9559504HAX的Datasheet PDF文件第1页浏览型号5962-9559504HAX的Datasheet PDF文件第2页浏览型号5962-9559504HAX的Datasheet PDF文件第4页浏览型号5962-9559504HAX的Datasheet PDF文件第5页浏览型号5962-9559504HAX的Datasheet PDF文件第6页浏览型号5962-9559504HAX的Datasheet PDF文件第7页浏览型号5962-9559504HAX的Datasheet PDF文件第8页浏览型号5962-9559504HAX的Datasheet PDF文件第9页  
WS128K32-XXX
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
Max
Unit
CS
OE
WE
T
RUTH
T
ABLE
Mode
Data I/O
Power
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
T
A
T
STG
V
G
T
J
V
CC
-55
-65
-0.5
+125
+150
Vcc+0.5
150
°C
°C
V
°C
V
H
L
L
L
X
L
X
H
X
H
L
H
Standby
Read
Write
Out Disable
High Z
Data Out
Data In
High Z
Standby
Active
Active
Active
-0.5
7.0
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Min
Max
Unit
C
APACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
WE
1-4
capacitance
HIP (PGA) H1
CQFP G4T
CQFP G2U/G2L
CQFP G1U/G1T
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
C
OE
C
WE
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
50
20
50
20
20
pF
pF
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
V
CC
V
IH
V
IL
T
A
4.5
2.2
-0.3
-55
5.5
V
CC
+ 0.3
+0.8
+125
V
V
V
°C
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
20
20
50
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC C
HARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C
TO
+125°C)
Parameter
Sym
Conditions
Min
-15
Max
Min
-17
Max
Min
-20
Max
Min
-25
Max
Units
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Parameter
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Sym
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
Conditions
10
10
600
80
0.4
2.4
2.4
-35
10
10
600
80
0.4
2.4
-45
10
10
600
80
0.4
2.4
-55
10
10
600
60
0.4
µA
µA
mA
mA
V
V
Units
Min
Max
Min
Max
Min
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
I
LI
I
LO
I
CC
I
SB
V
OL
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA, V
CC
= 4.5
2.4
10
10
600
60
0.4
2.4
10
10
600
60
0.4
2.4
10
10
600
60
0.4
µA
µA
mA
mA
V
V
I
OH
= -1.0mA, V
CC
= 4.5
Output High Voltage
V
OH
NOTE:
DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
D
ATA RETENTION
C
HARACTERISTICS
(F
OR
WS128K32L-XXX O
NLY
)
(TA = -55°C
TO
+125°C), (TA = -40°C
TO
+85°C)
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
V
CC
ICCDR
T
CDR
T
R
V
CC
= 2.0V
CS
³
VCC -0.2V
V
IN
³
V
CC
-0.2V
or V
IN
- 0.2V
2
-
0
T
RC
-
1
-
-
2
-
-
V
mA
ns
ns
NOTE:
Parameter guaranteed, but not tested.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com