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5962-9461101HXC 参数 Datasheet PDF下载

5962-9461101HXC图片预览
型号: 5962-9461101HXC
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 2MX8, 120ns, CMOS, CPGA66, HEX-IN-LINE, SINGLE CAVITY, WITH STANDOFFS-66]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 40 页 / 287 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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TABLE I. Electrical performance characteristics - Continued.  
Test  
Symbol  
Conditions 1/ 2/  
-55°C TC +125°C  
Group A  
subgroups  
Device  
types  
Limits  
Unit  
Min  
2.0  
Max  
5.5  
V
SS = 0 V dc  
+4.5 V dc VCC +5.5 V dc  
unless otherwise specified  
Data retention characteristics  
Data retention supply  
voltage  
VDR  
01-10  
V
CS VCC - 0.2 V dc  
1,2,3  
1,2,3  
Data retention current  
ICCDR1  
VCC = 3 V dc  
01-04  
05-10  
1.6  
28  
mA  
32  
19,20  
Capacitance  
COE  
CWE  
CCS  
CI/O  
CAD  
VIN = 0 V dc, f = 1.0 MHz,  
TA = +25°C  
4
4
4
4
4
All  
All  
All  
All  
All  
50  
20  
20  
20  
50  
pF  
pF  
pF  
pF  
pF  
OE capacitance 4/  
VOUT = 0 V dc, f = 1.0 MHz,  
TA = +25°C  
WE 1-4 capacitance 4/  
CS capacitance 4/  
VIN = 0 V dc, f = 1.0 MHz,  
TA = +25°C  
D0-31 capacitance 4/  
VOUT = 0 V dc, f = 1.0 MHz,  
TA = +25°C  
A0-16 capacitance 4/  
VOUT = 0 V dc, f = 1.0 MHz,  
TA = +25°C  
Functional tests  
Functional tests  
See 4.3.1c  
7,8A,8B  
9,10,11  
All  
Read cycle timing characteristics  
Read cycle timing  
tRC  
See figure 4  
01  
120  
100  
85  
70  
55  
45  
35  
25  
20  
17  
15  
12  
ns  
02  
03  
04  
05,11  
06,12  
07,13  
08,14  
09,15  
10,16  
17,19  
18,20  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-94611  
A
REVISION LEVEL  
SHEET  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
7
R
DSCC FORM 2234  
APR 97