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5962-9461105HXC 参数 Datasheet PDF下载

5962-9461105HXC图片预览
型号: 5962-9461105HXC
PDF下载: 下载PDF文件 查看货源
内容描述: [Cache SRAM Module, 512KX32, 55ns, CMOS, CPGA66, HEX-IN-LINE, SINGLE CAVITY, WITH STANDOFFS-66]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 40 页 / 287 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C
T
C
+125°C
V
SS
= 0 V dc
+4.5 V dc
V
CC
+5.5 V dc
unless otherwise specified
Group A
subgroups
Device
types
Min
Limits
Max
Unit
DC parameters
Operating supply current
I
CC
CS = V
IH
, OE = V
IH
,
V
CC
= 5.5 V dc
f = 5 MHz
f = 5 MHz
f = 18.2 MHz
f = 22.2 MHz
f = 28.6 MHz
f = 40 MHz
f = 50 MHz
f = 58.8 MHz
f = 66.67 MHz
f = 83.3 MHz
Standby current
I
SB
CS = V
IH
, OE = V
IH
,
V
CC
= 5.5 V dc
f
f
f
f
f
f
f
f
f
f
Input leakage current
Output leakage current
I
LI
I
LO
= 5 MHz
= 5 MHz
= 18.2 MHz
= 22.2 MHz
= 28.6 MHz
= 40 MHz
= 50 MHz
= 58.8 MHz
= 66.67 MHz
= 83.3 MHz
3/
1,2,3
01-04
05-16
05,11
06,12
07,13
08,14
09,15
10,16
17,19
18,20
200
600
625
635
650
675
725
750
200
250
mA
3/
1,2,3
01-04
05-16
05,11
06,12
07,13
08,14
09,15
10,16
17-20
17-20
All
All
4
80
150
150
190
240
280
320
80
80
10
10
mA
V
CC
= 5.5 V dc,
V
IN
= GND or V
CC
CS = V
IH
, OE = V
IH
,
V
IN
= GND or V
CC
V
CC
= +4.5 V dc,
I
OL
= 2.1 mA
V
CC
= +4.5 V dc,
I
OL
= 6 mA
1,2,3
1,2,3
µA
µA
Output low voltage
V
OL
1,2,3
01-06,
11,12
07-10,
13-20
0.4
0.4
2.4
2.4
V
Output high voltage
V
OH
V
CC
= +4.5 V dc,
I
OH
= -1.0 mA
V
CC
= +4.5 V dc,
I
OH
= -4.0 mA
1,2,3
01-06,
11,12
07-10,
13-20
V
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
A
REVISION LEVEL
R
5962-94611
SHEET
6
DSCC FORM 2234
APR 97