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5962-9461109HXC 参数 Datasheet PDF下载

5962-9461109HXC图片预览
型号: 5962-9461109HXC
PDF下载: 下载PDF文件 查看货源
内容描述: [Cache SRAM Module, 512KX32, 20ns, CMOS, CPGA66, HEX-IN-LINE, SINGLE CAVITY, WITH STANDOFFS-66]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 40 页 / 287 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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1. SCOPE
1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A
choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When
available, a choice of radiation hardness assurance levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
Federal
stock class
designator
\
-
RHA
designator
(see 1.2.1)
\/
Drawing number
1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA
levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type 1/ 2/
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20
Generic number
S512K32-120
S512K32-100
S512K32-85
S512K32-70
S512K32-55
S512K32-45
S512K32-35
S512K32-25
S512K32-20
S512K32-17
S512K32-55
S512K32-45
S512K32-35
S512K32-25
S512K32-20
S512K32-17
S512K32-15
S512K32-12
S512K32-15
S512K32-12
Circuit function
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
512K X 32-BIT SRAM
Access time
120 ns
100 ns
85 ns
70 ns
55 ns
45 ns
35 ns
25 ns
20 ns
17 ns
55 ns
45 ns
35 ns
25 ns
20 ns
17 ns
15 ns
12 ns
15 ns
12 ns
94611
01
Device
type
(see 1.2.2)
/
H
Device
class
designator
(see 1.2.3)
A
Case
outline
(see 1.2.4)
X
Lead
finish
(see 1.2.5)
1/ Due to the nature of the 4 transistor design of the die used in these device types, topologically pure testing is
important, particularly for high reliability applications. The device manufacturer should be consulted concerning
their testing methods and algorithms
2/ Device types 11 through 18 are not tested to data retention supply voltage (V
DR
) and data retention current (I
CCDR1
). See
table I.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
SIZE
A
REVISION LEVEL
R
5962-94611
SHEET
2
DSCC FORM 2234
APR 97