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5962-9318701HXA 参数 Datasheet PDF下载

5962-9318701HXA图片预览
型号: 5962-9318701HXA
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 512KX8, 120ns, CMOS, CHIP66,]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 226 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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TABLE I. Electrical performance characteristics.  
Test  
Symbol  
Conditions 1/ 2/  
-55°C TC +125°C  
Group A  
subgroups  
Device  
types  
Limits  
Unit  
VSS = 0 V dc  
Min  
Max  
+4.5 V dc VCC +5.5 V dc  
unless otherwise specified  
DC PARAMETERS  
Supply current,  
32-bit mode  
ICC32  
1,2,3  
1,2,3  
01-04  
05-18  
120  
600  
mA  
CS = VIL, OE = VIH,  
f = 5 MHz CMOS compatible  
VCC = +5.5 V dc  
Standby current  
ISB  
01,02  
03,04  
2.4  
5.0  
60  
mA  
CS = VCC, OE = VIH,  
f = 5 MHz CMOS compatible  
VCC = +5.5 V dc  
05-08,  
12-15  
09-11,  
16-18  
80  
10  
Input leakage current  
Output leakage current  
ILI  
VCC = +5.5 V dc,  
1,2,3  
1,2,3  
All  
µA  
µA  
VIN = GND or VCC  
ILO  
All  
10  
CS = VIH, OE = VIH,  
VOUT = GND or VCC  
Output low voltage  
Output high voltage  
DATA RETENTION  
VOL  
VCC = +4.5 V dc, IOL = +2.1  
mA  
1,2,3  
01-07,  
12-14  
0.4  
V
VCC = +4.5 V dc, IOL = +8.0  
mA  
08-11,  
15-18  
0.4  
VOH  
VCC = +4.5 V dc, IOH = -1.0  
mA  
1,2,3  
01-07,  
12-14  
2.4  
V
VCC = +4.5 V dc, IOH = -4.0  
mA  
08-11,  
15-18  
2.4  
2.0  
Data retention supply  
voltage  
VDR  
1,2,3  
1,2,3  
All  
5.5  
V
CS VCC - 0.2 V dc  
Data retention current  
ICCDR1  
VCC = +3.0 V dc  
01-04  
1.6  
mA  
05-11,  
18  
11.6  
12-17  
20.0  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-93187  
A
REVISION LEVEL  
SHEET  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
L
6
DSCC FORM 2234  
APR 97